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DMP3021SSS-13

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Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMP3021SSS-13

Diodes Incorporated · MOSFETs · SO-8

DMP3021SSS-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET, with maximum continuous body diode forward current of -3.2 A.
2 S passive Source terminal of the P-channel MOSFET, with maximum continuous body diode forward current of -3.2 A.
3 S passive Source terminal of the P-channel MOSFET, with maximum continuous body diode forward current of -3.2 A.
4 G input ESD-protected gate (internal gate protection diode) with a maximum gate-source voltage of ±25 V and threshold of -1.0 to -2.5 V.
5 D passive Drain terminal with a drain-source voltage rating of -30 V and pulsed drain current up to -128 A.
6 D passive Drain terminal with a drain-source voltage rating of -30 V and pulsed drain current up to -128 A.
7 D passive Drain terminal with a drain-source voltage rating of -30 V and pulsed drain current up to -128 A.
8 D passive Drain terminal with a drain-source voltage rating of -30 V and pulsed drain current up to -128 A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -30 V TA = +25°C 2
Gate-Source Voltage VGSS -25 25 V TA = +25°C 2
Continuous Drain Current TA=+25°C ID -10.4 A VGS = -10V, Steady State, Note 6 2
Continuous Drain Current TA=+70°C ID -8.3 A VGS = -10V, Steady State, Note 6 2
Continuous Drain Current TC=+25°C ID -39 A VGS = -10V, Steady State, Note 7 2
Continuous Drain Current TC=+70°C ID -31 A VGS = -10V, Steady State, Note 7 2
Maximum Continuous Body Diode Forward Current IS -3.2 A Note 7 2
Pulsed Drain Current IDM -128 A 10µs Pulse, Duty Cycle = 1% 2
Pulsed Body Diode Forward Current ISM -128 A 10µs Pulse, Duty Cycle = 1% 2
Avalanche Current IAS -13 A L = 1mH, Note 8 2
Avalanche Energy EAS 84 mJ L = 1mH, Note 8 2
Total Power Dissipation (Note 5) PD 1 W TA = +25°C 2
Thermal Resistance, Junction to Ambient (Note 5) RθJA 127 °C/W Steady State 2
Total Power Dissipation (Note 6) PD 2.5 W TA = +25°C 2
Thermal Resistance, Junction to Ambient (Note 6) RθJA 51 °C/W Steady State 2
Thermal Resistance, Junction to Case RθJC 3.6 °C/W Note 7 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -30V, VGS = 0V 2
Gate-Source Leakage IGSS -10 10 μA VGS = ±25V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) -1 -2.5 V VDS = VGS, ID = -250μA 2
Static Drain-Source On-Resistance (VGS=-10V) RDS(ON) 10.7 15 mΩ VGS = -10V, ID = -8A 2
Static Drain-Source On-Resistance (VGS=-5V) RDS(ON) 16 25 mΩ VGS = -5V, ID = -5A 2
Diode Forward Voltage VSD -0.7 -1.2 V VGS = 0V, IS = -1A 2
Input Capacitance Ciss 1799 pF VDS = -15V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 259 pF VDS = -15V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 225 pF VDS = -15V, VGS = 0V, f = 1.0MHz 2
Gate Resistance Rg 3.2 Ω VDS = 0V, VGS = 0V, f = 1.0MHz 2
Total Gate Charge (VGS = -4.5V) Qg 17.4 nC VDS = -15V, ID = -10A 2
Total Gate Charge (VGS = -10V) Qg 34 nC VDS = -15V, ID = -10A 2
Gate-Source Charge Qgs 5.1 nC VDS = -15V, ID = -10A 2
Gate-Drain Charge Qgd 8.4 nC VDS = -15V, ID = -10A 2
Turn-On Delay Time tD(ON) 6.5 ns VDD = -15V, VGS = -10V, RG = 3Ω, ID = -10A 2
Turn-On Rise Time tR 18.3 ns VDD = -15V, VGS = -10V, RG = 3Ω, ID = -10A 2
Turn-Off Delay Time tD(OFF) 35.8 ns VDD = -15V, VGS = -10V, RG = 3Ω, ID = -10A 2
Turn-Off Fall Time tF 23.7 ns VDD = -15V, VGS = -10V, RG = 3Ω, ID = -10A 2
Reverse Recovery Time tRR 14.9 ns IS = -8A, dI/dt = 500A/μs 2
Reverse Recovery Charge QRR 15.3 nC IS = -8A, dI/dt = 500A/μs 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminal Connections Indicator: See Diagram Below  Terminals: FinishMatte Tin Annealed over Copper Lead-Frame. 1

CAD (KiCad official)

  • Symbol: DMP3021SSS-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: dmp3021sss-13-etched.step / dmp3021sss-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmp3021sss-13.step / dmp3021sss-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 6f479d5cd0d76ea2, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF