component
DMP2305UVT-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, TSOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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DMP2305UVT-7
Diodes Incorporated · MOSFETs · TSOT-26
DMP2305UVT-7 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, P-channel MOSFET drain with V(BR)DSS of -20V, connected internally to the other drain pins (2, 5, 6). |
| 2 | D | passive | Drain, P-channel MOSFET drain with V(BR)DSS of -20V, connected internally to the other drain pins (1, 5, 6). |
| 3 | G | input | Gate, with maximum gate-source voltage of ±8V and threshold of -0.5V to -0.9V at ID = -250μA. |
| 4 | S | passive | Source, with continuous body diode forward current up to -4.23A. |
| 5 | D | passive | Drain, P-channel MOSFET drain with continuous current to -4.23A at VGS = -4.5V (TA = 25°C), common with pins 1, 2, 6. |
| 6 | D | passive | Drain, P-channel MOSFET drain with pulsed current up to -16A, common with pins 1, 2, 5. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TSOT-26 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -20 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | -8 | 8 | V | TA = +25°C | 2 | |
| Continuous Drain Current, TA=+25°C | ID | -4.23 | A | VGS = -4.5V, steady state, Note 6 | 2 | ||
| Continuous Drain Current, TA=+70°C | ID | -2.98 | A | VGS = -4.5V, steady state, Note 6 | 2 | ||
| Continuous Drain Current, TA=+25°C | ID | -3.49 | A | VGS = -2.5V, steady state, Note 6 | 2 | ||
| Continuous Drain Current, TA=+70°C | ID | -2.79 | A | VGS = -2.5V, steady state, Note 6 | 2 | ||
| Maximum Continuous Body Diode Forward Current | IS | -4.23 | A | Note 6 | 2 | ||
| Pulsed Drain Current | IDM | -16 | A | 10μs pulse, duty cycle = 1% | 2 | ||
| Total Power Dissipation (min pad) | PD | 1.25 | W | Note 5 | 2 | ||
| Total Power Dissipation (1 inch² pad) | PD | 1.64 | W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient (min pad) | RθJA | 100 | °C/W | Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient (1 inch² pad) | RθJA | 76 | °C/W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 14 | °C/W | Note 6 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0V, ID = -250μA | 4 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -20V, VGS = 0V | 4 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±8V, VDS = 0V | 4 | |
| Gate Threshold Voltage | VGS(th) | -0.5 | -0.9 | V | VDS = VGS, ID = -250μA | 4 | |
| Static Drain-Source On-Resistance | RDS(ON) | 45 | 60 | mΩ | VGS = -4.5V, ID = -4.2A | 4 | |
| Static Drain-Source On-Resistance | RDS(ON) | 60 | 90 | mΩ | VGS = -2.5V, ID = -3.4A | 4 | |
| Static Drain-Source On-Resistance | RDS(ON) | 87 | 113 | mΩ | VGS = -1.8V, ID = -2.0A | 4 | |
| Forward Transfer Admittance | /Yfs/ | 9 | S | VDS = -5V, ID = -4A | 4 | ||
| Input Capacitance | Ciss | 727 | pF | VDS = -20V, VGS = 0V, f = 1.0MHz | 4 | ||
| Output Capacitance | Coss | 69 | pF | VDS = -20V, VGS = 0V, f = 1.0MHz | 4 | ||
| Reverse Transfer Capacitance | Crss | 64 | pF | VDS = -20V, VGS = 0V, f = 1.0MHz | 4 | ||
| Gate Resistance | RG | 23 | Ω | VGS = 0V, VDS = 0V, f = 1.0MHz | 4 | ||
| Total Gate Charge | Qg | 7.6 | nC | VGS = -4.5V, VDS = -4V, ID = -3.5A | 4 | ||
| Gate-Source Charge | Qgs | 1.4 | nC | VGS = -4.5V, VDS = -4V, ID = -3.5A | 4 | ||
| Gate-Drain Charge | Qgd | 1.2 | nC | VGS = -4.5V, VDS = -4V, ID = -3.5A | 4 | ||
| Turn-On Delay Time | tD(on) | 14 | ns | VDS = -4V, VGS = -4.5V, RL = 4Ω, RG = 6Ω, ID = -1A | 4 | ||
| Turn-On Rise Time | tr | 13 | ns | VDS = -4V, VGS = -4.5V, RL = 4Ω, RG = 6Ω, ID = -1A | 4 | ||
| Turn-Off Delay Time | tD(off) | 53.8 | ns | VDS = -4V, VGS = -4.5V, RL = 4Ω, RG = 6Ω, ID = -1A | 4 | ||
| Turn-Off Fall Time | tf | 23.2 | ns | VDS = -4V, VGS = -4.5V, RL = 4Ω, RG = 6Ω, ID = -1A | 4 |
CAD (KiCad official)
- Symbol:
DMP2305UVT-7 - Footprint:
Package_TO_SOT_SMD:TSOT-23-6 - 3D model: TSOT-26 (KiCad packages3D, STEP)
- 3D model files:
dmp2305uvt-7-etched.step/dmp2305uvt-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmp2305uvt-7.step/dmp2305uvt-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
4ee18a44194e77ff, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).