component
DMP2109UVT-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, TSOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
DMP2109UVT-13
Diodes Incorporated · MOSFETs · TSOT-26
DMP2109UVT-13 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -20 V (BVDSS). |
| 2 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -20 V (BVDSS). |
| 3 | G | input | Gate terminal of the MOSFET; gate-source voltage is rated at ±10 V (VGSS). |
| 4 | S | passive | Source terminal of the MOSFET; the maximum continuous body diode forward current is -1.2 A (IS). |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -20 V (BVDSS). |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -20 V (BVDSS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TSOT-26 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0V, ID = -250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | TJ = +25°C, VDS = -16V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±8V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | -0.45 | -1 | V | VDS = VGS, ID = -250µA | 2 | |
| Static Drain-Source On-Resistance (VGS = -4.5V) | RDS(ON) | 54 | 80 | mΩ | VGS = -4.5V, ID = -2.8A | 2 | |
| Static Drain-Source On-Resistance (VGS = -2.5V) | RDS(ON) | 70 | 110 | mΩ | VGS = -2.5V, ID = -2.0A | 2 | |
| Diode Forward Voltage | VSD | -0.7 | -1 | V | VGS = 0V, IS = -1A | 2 | |
| Drain-Source Voltage | VDSS | -20 | V | 2 | |||
| Gate-Source Voltage | VGSS | -10 | 10 | V | 2 | ||
| Continuous Drain Current (VGS = -4.5V, steady state) | ID | -3.7 | A | VGS = -4.5V, TA = +25°C, steady state, Note 6 | 2 | ||
| Continuous Drain Current (VGS = -4.5V, steady state) | ID | -2.9 | A | VGS = -4.5V, TA = +70°C, steady state, Note 6 | 2 | ||
| Continuous Drain Current (VGS = -2.5V, steady state) | ID | -3.1 | A | VGS = -2.5V, TA = +25°C, steady state, Note 6 | 2 | ||
| Continuous Drain Current (VGS = -2.5V, steady state) | ID | -2.5 | A | VGS = -2.5V, TA = +70°C, steady state, Note 6 | 2 | ||
| Maximum Continuous Body Diode Forward Current | IS | -1.2 | A | Note 6 | 2 | ||
| Pulsed Drain Current | IDM | -20 | A | 10µs pulse, duty cycle = 1% | 2 | ||
| Total Power Dissipation | PD | 1.2 | W | Note 5 | 2 | ||
| Total Power Dissipation | PD | 1 | W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient (steady state) | RθJA | 105 | °C/W | Note 5, steady state | 2 | ||
| Thermal Resistance, Junction to Ambient (steady state) | RθJA | 77 | °C/W | Note 6, steady state | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminal Connections: See Diagram Terminals: Finish, Tin Finish Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMP2109UVT-13 - Footprint:
Package_TO_SOT_SMD:TSOT-23-6 - 3D model: TSOT-26 (KiCad packages3D, STEP)
- 3D model files:
dmp2109uvt-13-etched.step/dmp2109uvt-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmp2109uvt-13.step/dmp2109uvt-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
c08e84264a6e5dba, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMP2109UVT-13
**Diodes Incorporated** · MOSFETs · TSOT-26
DMP2109UVT-13 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -20 V (BVDSS). |
| 2 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -20 V (BVDSS). |
| 3 | G | input | Gate terminal of the MOSFET; gate-source voltage is rated at ±10 V (VGSS). |
| 4 | S | passive | Source terminal of the MOSFET; the maximum continuous body diode forward current is -1.2 A (IS). |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -20 V (BVDSS). |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -20 V (BVDSS). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TSOT-26 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | | | V | VGS = 0V, ID = -250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | TJ = +25°C, VDS = -16V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±8V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(TH) | -0.45 | | -1 | V | VDS = VGS, ID = -250µA | 2 |
| Static Drain-Source On-Resistance (VGS = -4.5V) | RDS(ON) | | 54 | 80 | mΩ | VGS = -4.5V, ID = -2.8A | 2 |
| Static Drain-Source On-Resistance (VGS = -2.5V) | RDS(ON) | | 70 | 110 | mΩ | VGS = -2.5V, ID = -2.0A | 2 |
| Diode Forward Voltage | VSD | | -0.7 | -1 | V | VGS = 0V, IS = -1A | 2 |
| Drain-Source Voltage | VDSS | -20 | | | V | | 2 |
| Gate-Source Voltage | VGSS | -10 | | 10 | V | | 2 |
| Continuous Drain Current (VGS = -4.5V, steady state) | ID | -3.7 | | | A | VGS = -4.5V, TA = +25°C, steady state, Note 6 | 2 |
| Continuous Drain Current (VGS = -4.5V, steady state) | ID | -2.9 | | | A | VGS = -4.5V, TA = +70°C, steady state, Note 6 | 2 |
| Continuous Drain Current (VGS = -2.5V, steady state) | ID | -3.1 | | | A | VGS = -2.5V, TA = +25°C, steady state, Note 6 | 2 |
| Continuous Drain Current (VGS = -2.5V, steady state) | ID | -2.5 | | | A | VGS = -2.5V, TA = +70°C, steady state, Note 6 | 2 |
| Maximum Continuous Body Diode Forward Current | IS | -1.2 | | | A | Note 6 | 2 |
| Pulsed Drain Current | IDM | -20 | | | A | 10µs pulse, duty cycle = 1% | 2 |
| Total Power Dissipation | PD | | | 1.2 | W | Note 5 | 2 |
| Total Power Dissipation | PD | | | 1 | W | Note 6 | 2 |
| Thermal Resistance, Junction to Ambient (steady state) | RθJA | | 105 | | °C/W | Note 5, steady state | 2 |
| Thermal Resistance, Junction to Ambient (steady state) | RθJA | | 77 | | °C/W | Note 6, steady state | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminal Connections: See Diagram Terminals: Finish, Tin Finish Annealed over Copper Leadframe. | 1 |
## CAD (KiCad official)
- Symbol: `DMP2109UVT-13`
- Footprint: `Package_TO_SOT_SMD:TSOT-23-6`
- 3D model: TSOT-26 (KiCad packages3D, STEP)
- 3D model files: `dmp2109uvt-13-etched.step` / `dmp2109uvt-13-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmp2109uvt-13.step` / `dmp2109uvt-13.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603065163650117632) (7 pp, sha256 `c08e84264a6e5dba`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmp2109uvt-13-datasheet.pdf)