component
DMP2100U-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Contents
README
markdownDMP2100U-7
Diodes Incorporated · MOSFETs · SOT-23
DMP2100U-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; ESD protected up to 3kV via internal gate protection diode, with VGSS maximum of ±10V (AEC-Q101 maximum ±9.6V) and threshold VGS(TH) of -0.3V to -1.4V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, connected to the body diode anode and the ESD gate protection diode. |
| 3 | D | passive | Drain terminal of the P-channel MOSFET with VDSS of -20V and continuous drain current of -4.3A at TA = +25°C (VGS = -10V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0V, ID = -250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -20V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | 10 | µA | VGS = ±8V, VDS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | -1.4 | -0.3 | V | VDS = VGS, ID = -250µA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 25 | 38 | mΩ | VGS = -10V, ID = -3.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 29 | 43 | mΩ | VGS = -4.5V, ID = -3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 37 | 75 | mΩ | VGS = -2.5V, ID = -1A | 2 | |
| Drain-Source Voltage | VDSS | -20 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | -10 | 10 | V | AEC-Q101 VGS maximum is ±9.6V | 2 | |
| Continuous Drain Current, steady state | ID | -4.3 | A | VGS = -10V, TA = +25°C, Note 9 | 2 | ||
| Continuous Drain Current, steady state | ID | -3.4 | A | VGS = -10V, TA = +70°C, Note 9 | 2 | ||
| Continuous Drain Current, t<5s | ID | -5.5 | A | VGS = -10V, TA = +25°C, Note 9 | 2 | ||
| Continuous Drain Current, t<5s | ID | -4.3 | A | VGS = -10V, TA = +70°C, Note 9 | 2 | ||
| Maximum Continuous Body Diode Forward Current | IS | -2 | A | Note 9 | 2 | ||
| Pulsed Drain Current | IDM | -30 | A | 10µs Pulse, Duty Cycle = 1% | 2 | ||
| Pulsed Body Diode Forward Current | ISM | -30 | A | 10µs Pulse, Duty Cycle = 1% | 2 | ||
| Total Power Dissipation | PD | 0.8 | W | TA = +25°C, Note 8 | 2 | ||
| Total Power Dissipation | PD | 0.5 | W | TA = +70°C, Note 8 | 2 | ||
| Total Power Dissipation | PD | 1.3 | W | TA = +25°C, Note 9 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 161 | °C/W | Steady State, Note 8 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 96 | °C/W | t<5s, Note 8 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 99 | °C/W | Steady State, Note 9 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 60 | °C/W | t<5s, Note 9 | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 15 | °C/W | Note 9 | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 47 | mΩ | VGS = -1.8V, ID = -0.5A | 2 | ||
| Forward Transfer Admittance | /Yfs/ | 3 | S | VDS = -5V, ID = -4A | 2 | ||
| Input Capacitance | Ciss | 216 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 90 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 24 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Gate Resistance | Rg | 250 | Ω | VDS = 0V, VGS = 0V, f = 1.0MHz | 2 | ||
| Total Gate Charge | Qg | 9.1 | nC | VGS = -4.5V, VDS = -10V, ID = -4A | 2 | ||
| Gate-Source Charge | Qgs | 1.6 | nC | VGS = -4.5V, VDS = -10V, ID = -4A | 2 | ||
| Gate-Drain Charge | Qgd | 2 | nC | VGS = -4.5V, VDS = -10V, ID = -4A | 2 | ||
| Turn-On Delay Time | tD(ON) | 80 | ns | VDS = -10V, VGS = -4.5V, RD = 2.5Ω, RG = 3.0Ω | 2 | ||
| Turn-On Rise Time | tR | 155 | ns | VDS = -10V, VGS = -4.5V, RD = 2.5Ω, RG = 3.0Ω | 2 | ||
| Turn-Off Delay Time | tD(OFF) | 688 | ns | VDS = -10V, VGS = -4.5V, RD = 2.5Ω, RG = 3.0Ω | 2 | ||
| Turn-Off Fall Time | tF | 423 | ns | VDS = -10V, VGS = -4.5V, RD = 2.5Ω, RG = 3.0Ω | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminals: Finish ⎯ Matte Tin Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMP2100U-7 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
dmp2100u-7-etched.step/dmp2100u-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmp2100u-7.step/dmp2100u-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
fb676a151bedf03d, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).