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DMP2035UVTQ-7

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Diodes Incorporated MOSFETs, TSOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMP2035UVTQ-7

Diodes Incorporated · MOSFETs · TSOT-26

DMP2035UVTQ-7 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain, connected internally to the other drain pins (2, 5, 6); drain-source breakdown voltage is -20V.
2 D passive Drain, connected internally to the other drain pins (1, 5, 6); continuous drain current is -6.0A at VGS = -4.5V, TA = +25°C (Note 7).
3 G input Gate with integrated protection diode (ESD protected up to 3kV); maximum gate-source voltage is ±12V.
4 S passive Source; maximum continuous body diode forward current is -2.0A.
5 D passive Drain, connected internally to the other drain pins (1, 2, 6); pulsed drain current is -24A (10µs pulse, 1% duty).
6 D passive Drain, connected internally to the other drain pins (1, 2, 5); RDS(on) is 35mΩ max at VGS = -4.5V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TSOT-26
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -20 V TA = 25°C 2
Gate-Source Voltage VGSS -12 12 V TA = 25°C 2
Continuous Drain Current, VGS=-4.5V, steady state ID -6 A TA = +25°C, Note 7 2
Continuous Drain Current, VGS=-4.5V, steady state ID -4.8 A TA = +70°C, Note 7 2
Continuous Drain Current, VGS=-4.5V, t<10s ID -7.2 A TA = +25°C, Note 7 2
Continuous Drain Current, VGS=-4.5V, t<10s ID -5.7 A TA = +70°C, Note 7 2
Continuous Drain Current, VGS=-2.5V, steady state ID -5.2 A TA = +25°C, Note 7 2
Continuous Drain Current, VGS=-2.5V, steady state ID -4.1 A TA = +70°C, Note 7 2
Continuous Drain Current, VGS=-2.5V, t<10s ID -6.2 A TA = +25°C, Note 7 2
Continuous Drain Current, VGS=-2.5V, t<10s ID -4.9 A TA = +70°C, Note 7 2
Maximum Continuous Body Diode Forward Current IS -2 A Note 7 2
Pulsed Drain Current IDM -24 A 10µs pulse, duty cycle = 1% 2
Total Power Dissipation (Note 6) PD 1.2 W TA = 25°C, Note 6 2
Thermal Resistance, Junction to Ambient, steady state (Note 6) RθJA 106 °C/W Steady State, Note 6 2
Thermal Resistance, Junction to Ambient, t<10s (Note 6) RθJA 74 °C/W t<10s, Note 6 2
Total Power Dissipation (Note 7) PD 2 W TA = 25°C, Note 7 2
Thermal Resistance, Junction to Ambient, steady state (Note 7) RθJA 65 °C/W Steady State, Note 7 2
Thermal Resistance, Junction to Ambient, t<10s (Note 7) RθJA 46 °C/W t<10s, Note 7 2
Thermal Resistance, Junction to Case RθJC 11.8 °C/W Steady State, Note 7 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS -20 V VGS = 0V, ID = -250µA 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -20V, VGS = 0V 2
Gate-Source Leakage IGSS 10 µA VGS = 8V, VDS = 0V 2
Gate Threshold Voltage VGS(th) -0.4 -0.7 -1.5 V VDS = VGS, ID = -250µA 2
Gate Threshold Voltage Temperature Coefficient △VGS(th)/△TJ 2.5 mV/°C ID = -250µA, Referenced to +25°C 2
Static Drain-Source On-Resistance RDS(ON) 23 35 mΩ VGS = -4.5V, ID = -4.0A 2
Static Drain-Source On-Resistance RDS(ON) 30 45 mΩ VGS = -2.5V, ID = -4.0A 2
Static Drain-Source On-Resistance RDS(ON) 41 62 mΩ VGS = -1.8V, ID = -2.0A 2
Diode Forward Voltage VSD -0.7 -1 V VGS = 0V, IS = -1A 2
Input Capacitance Ciss 1610 2400 pF VDS = -10V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 157 210 pF VDS = -10V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 145 200 pF VDS = -10V, VGS = 0V, f = 1.0MHz 2
Gate Resistance RG 9.4 14.1 Ω VDS = 0V, VGS = 0V, f = 1.0MHz 2
Total Gate Charge Qg 15.4 23.1 nC VDS = -10V, VGS = -4.5V, ID = -4A 2
Turn-On Delay Time tD(on) 17 33 ns VGS = -4.5V, VDS = -10V, RG = 6Ω, ID = -1A, RL = 10Ω 2
Turn-On Rise Time tr 12 19 ns VGS = -4.5V, VDS = -10V, RG = 6Ω, ID = -1A, RL = 10Ω 2
Turn-Off Delay Time tD(off) 94 150 ns VGS = -4.5V, VDS = -10V, RG = 6Ω, ID = -1A, RL = 10Ω 2
Turn-Off Fall Time tf 42 64 ns VGS = -4.5V, VDS = -10V, RG = 6Ω, ID = -1A, RL = 10Ω 2
Reverse Recovery Time trr 14 25 ns IF =-4.5A, di/dt=100A/µS 2
Reverse Recovery Charge Qrr 4 8 nC IF =-4.5A, di/dt=100A/µS 2
Forward Transfer Admittance /Yfs/ 18 S VDS = -5V, ID = -5.5A 2
Gate-Source Charge Qgs 2.5 nC VDS = -10V, VGS = -4.5V, ID = -4A 2
Gate-Drain Charge Qgd 3.3 nC VDS = -10V, VGS = -4.5V, ID = -4A 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminal Connections: See Diagram  Terminals: Finish, Matte Tin Annealed over Copper Leadframe. 1

CAD (KiCad official)

  • Symbol: DMP2035UVTQ-7
  • Footprint: Package_TO_SOT_SMD:TSOT-23-6
  • 3D model: TSOT-26 (KiCad packages3D, STEP)
  • 3D model files: dmp2035uvtq-7-etched.step / dmp2035uvtq-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmp2035uvtq-7.step / dmp2035uvtq-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 aefb2feab533679c, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF