# DMP10H400SK3-VB

**VBsemi Elec** · MOSFETs · TO-252

DMP10H400SK3-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated for a gate-source voltage of ±20 V and a gate threshold VGS(th) of -1 V to -2.5 V at ID = -250 µA. |
| 2 | D | passive | Drain of the P-channel MOSFET, internally connected to the tab, rated for VDS = -100 V with continuous drain current of -8.8 A at TC = 25 °C. |
| 3 | S | passive | Source of the P-channel MOSFET; the datasheet gives no source-specific limit, and the body-diode continuous current is rated at -8.8 A (IS). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -8.8 | A | TC = 25 °C (TJ = 150 °C) | 1 |
| Continuous Drain Current | ID |  |  | -7.1 | A | TC = 70 °C | 1 |
| Pulsed Drain Current | IDM |  |  | -25 | A |  | 1 |
| Avalanche Current | IAS |  |  | -18 | A |  | 1 |
| Single Avalanche Energy | EAS |  |  | 16.2 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD |  |  | 32.1 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 2.5 | W | TA = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Junction-to-Ambient (PCB Mount) | RthJA |  |  | 50 | °C/W | PCB mount, 1 in² square FR-4 PCB | 1 |
| Junction-to-Case (Drain) | RthJC |  |  | 3.9 | °C/W |  | 1 |
| Drain-Source Breakdown Voltage | VDS | -100 |  |  | V | VDS = 0 V, ID = -250 µA | 2 |
| Gate Threshold Voltage | VGS(th) | -1 |  | -2.5 | V | VDS = VGS, ID = -250 µA | 2 |
| Gate-Body Leakage | IGSS | -250 |  | 250 | nA | VDS = 0 V, VGS = ±20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = -100 V, VGS = 0 V, TJ = 25 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -50 | µA | VDS = -100 V, VGS = 0 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -250 | µA | VDS = -100 V, VGS = 0 V, TJ = 150 °C | 2 |
| On-State Drain Current | ID(on) | -15 |  |  | A | VDS ≤ -10 V, VGS = -10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.25 | Ω | VGS = -10 V, ID = -3.6 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.28 | Ω | VGS = -4.5 V, ID = -3.4 A | 2 |
| Gate Resistance | Rg | 1.2 | 5.7 | 11.5 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) |  | 7 | 14 | ns | VDD = -50 V, RL = 17.2 Ω, ID ≅ -2.9 A, VGEN = -10 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 12 | 18 | ns | VDD = -50 V, RL = 17.2 Ω, ID ≅ -2.9 A, VGEN = -10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 33 | 50 | ns | VDD = -50 V, RL = 17.2 Ω, ID ≅ -2.9 A, VGEN = -10 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 9 | 18 | ns | VDD = -50 V, RL = 17.2 Ω, ID ≅ -2.9 A, VGEN = -10 V, Rg = 1 Ω | 2 |
| Continuous Current (body diode) | IS |  |  | -8.8 | A | TC = 25 °C | 2 |
| Pulsed Current (body diode) | ISM |  |  | -15 | A | TC = 25 °C | 2 |
| Forward Voltage | VSD |  | -0.8 | -1.5 | V | IF = -2.9 A, VGS = 0 V | 2 |
| Reverse Recovery Time | trr |  |  | 75 | ns | IF = -2.9 A, dI/dt = 100 A/µs | 2 |
| Peak Reverse Recovery Current | IRM(REC) |  | -4 | -6 | A | IF = -2.9 A, dI/dt = 100 A/µs | 2 |
| Reverse Recovery Charge | Qrr |  | 98 | 147 | nC | IF = -2.9 A, dI/dt = 100 A/µs | 2 |
| Forward Transconductance | gfs |  | 12 |  | S | VDS = -15 V, ID = -3.6 A | 2 |
| Input Capacitance | Ciss |  | 1055 |  | pF | VGS = 0 V, VDS = -50 V, f = 1 MHz | 2 |
| Output Capacitance | Coss |  | 65 |  | pF | VGS = 0 V, VDS = -50 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 41 |  | pF | VGS = 0 V, VDS = -50 V, f = 1 MHz | 2 |
| Total Gate Charge | Qg |  | 23.2 | 34.8 | nC | VDS = -50 V, VGS = -10 V, ID = -3.6 A | 2 |
| Total Gate Charge | Qg |  | 11.7 | 17.6 | nC | VDS = -50 V, VGS = -4.5 V, ID = -3.6 A | 2 |
| Gate-Source Charge | Qgs |  | 3.5 |  | nC |  | 2 |
| Gate-Drain Charge | Qgd |  | 4.8 |  | nC |  | 2 |

## CAD (KiCad official)

- Symbol: `DMP10H400SK3-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `dmp10h400sk3-vb-etched.step` / `dmp10h400sk3-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmp10h400sk3-vb.step` / `dmp10h400sk3-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/dmp10h400sk3-vb-datasheet.pdf) (8 pp, sha256 `9ba87af3cfae4ee2`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dmp10h400sk3-vb-datasheet.pdf)