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DMP1045UQ-7

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Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 29d ago
viewers dmp1045uq-7: viewers · Ray 29d ago
dmp1045uq-7-etched.glb dmp1045uq-7: factory component page (tier=lcsc) · Ray 29d ago
dmp1045uq-7-etched.step dmp1045uq-7: factory component page (tier=lcsc) · Ray 29d ago
dmp1045uq-7-hero.glb dmp1045uq-7: hero GLB from the etched model (keeps the MPN mark) · Ray 29d ago
dmp1045uq-7-hero.overlay.json Publish 0.1.0 · Ray 29d ago
dmp1045uq-7.glb Publish 0.1.0 · Ray 29d ago
dmp1045uq-7.kicad_mod Publish 0.1.0 · Ray 29d ago
dmp1045uq-7.kicad_sym Publish 0.1.0 · Ray 29d ago
dmp1045uq-7.lbr Publish 0.1.0 · Ray 29d ago
dmp1045uq-7.step Publish 0.1.0 · Ray 29d ago
package.json Publish 0.1.0 · Ray 29d ago
page.json dmp1045uq-7: specified limits as data (metadata.characteristics, 25 rows from the datasheet) · Ray 23d ago
README.md dmp1045uq-7: specified limits as data (metadata.characteristics, 25 rows from the datasheet) · Ray 23d ago

DMP1045UQ-7

Diodes Incorporated · MOSFETs · SOT-23

DMP1045UQ-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate, ESD-protected through an internal gate protection diode; VGSS rating is ±8V and threshold VGS(TH) is -0.3V to -1.0V at ID = -250µA.
2 S passive Source of the P-channel MOSFET, with body diode continuous forward current rated at -2A.
3 D passive Drain of the P-channel MOSFET, with VDSS of -12V and continuous drain current of -5.2A (Note 6, VGS = -4.5V, TA = +25°C).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -12 V VGS = 0V, ID = -250µA 2
Zero Gate Voltage Drain Current IDSS -1 µA TJ = +25°C; VDS = -12V, VGS = 0V 2
Gate-Source Leakage IGSS -10 10 µA VGS = ±8V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) -0.3 -0.55 -1 V VDS = VGS, ID = -250µA 2
Static Drain-Source On-Resistance RDS(ON) 26 31 mΩ VGS = -4.5V, ID = -4.0A 2
Static Drain-Source On-Resistance RDS(ON) 31 45 mΩ VGS = -2.5V, ID = -3.5A 2
Static Drain-Source On-Resistance RDS(ON) 45 75 mΩ VGS = -1.8V, ID = -2.7A 2
Drain-Source Voltage VDSS -12 V 2
Gate-Source Voltage VGSS -8 8 V 2
Continuous Drain Current (Note 5) ID -4 A Steady state, TA = +25°C, VGS = -4.5V, Note 5 2
Continuous Drain Current (Note 5) ID -3.1 A Steady state, TA = +70°C, VGS = -4.5V, Note 5 2
Continuous Drain Current (Note 5) ID -3.3 A Steady state, TA = +25°C, VGS = -2.5V, Note 5 2
Continuous Drain Current (Note 5) ID -2.6 A Steady state, TA = +70°C, VGS = -2.5V, Note 5 2
Continuous Drain Current (Note 6) ID -5.2 A Steady state, TA = +25°C, VGS = -4.5V, Note 6 2
Continuous Drain Current (Note 6) ID -4.2 A Steady state, TA = +70°C, VGS = -4.5V, Note 6 2
Continuous Drain Current (Note 6) ID -4.3 A Steady state, TA = +25°C, VGS = -2.5V, Note 6 2
Continuous Drain Current (Note 6) ID -3.4 A Steady state, TA = +70°C, VGS = -2.5V, Note 6 2
Maximum Continuous Body Diode Forward Current (Note 7) IS -2 A 2
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6) IDM -40 A 10µs pulse, duty cycle = 1%, Note 6 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Total Power Dissipation (Note 5) PD 0.8 W Note 5 (FR-4, minimum recommended pad layout) 2
Total Power Dissipation (Note 6) PD 1.3 W Note 6 (FR-4, 2oz copper, thermal vias, 1 inch square plate) 2
Thermal Resistance, Junction to Ambient (Note 5) RθJA 168 °C/W Note 5 (FR-4, minimum recommended pad layout) 2
Thermal Resistance, Junction to Ambient (Note 6) RθJA 99 °C/W Note 6 (FR-4, 2oz copper, thermal vias, 1 inch square plate) 2
Thermal Resistance, Junction to Case (Note 6) RθJC 14.8 °C/W Note 6 2

CAD (KiCad official)

  • Symbol: DMP1045UQ-7
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dmp1045uq-7-etched.step / dmp1045uq-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmp1045uq-7.step / dmp1045uq-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 437fe95f153ccc4d, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF