component
DMN65D9L-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Contents
README
markdownDMN65D9L-7
Diodes Incorporated · MOSFETs · SOT-23-3
DMN65D9L-7 from Diodes Incorporated, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, ESD-protected by an internal gate protection diode, with VGSS rated ±16 V and gate threshold VGS(TH) 1.0 V to 2.5 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with body diode forward current IS up to 335 mA. |
| 3 | D | passive | Drain terminal with VDSS of 60 V and continuous drain current of 335 mA at TA = +25°C (VGS = 10 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0V, ID = 10µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -10 | 10 | µA | VGS = ±16V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 2.5 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 3.2 | 4 | Ω | VGS = 10V, ID = 0.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2.9 | 4.1 | Ω | VGS = 5V, ID = 0.2A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 3 | 4.2 | Ω | VGS = 4V, ID = 0.2A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.1 | V | VGS = 0V, IS = 115mA | 2 | |
| Drain-Source Voltage | VDSS | 60 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | -16 | 16 | V | TA = +25°C | 2 | |
| Continuous Drain Current | ID | 335 | mA | VGS = 10V, Steady State, TA = +25°C, Note 6 | 2 | ||
| Continuous Drain Current | ID | 268 | mA | VGS = 10V, Steady State, TA = +70°C, Note 6 | 2 | ||
| Maximum Body Diode Forward Current | IS | 335 | mA | Note 6 | 2 | ||
| Pulsed Drain Current | IDM | 700 | mA | 10µs Pulse, Duty Cycle = 1% | 2 | ||
| Pulsed Source Current | ISM | 700 | mA | 10µs Pulse, Duty Cycle = 1% | 2 | ||
| Total Power Dissipation | PD | 270 | mW | Note 5, TA = +25°C | 2 | ||
| Total Power Dissipation | PD | 670 | mW | Note 6, TA = +25°C | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 293 | °C/W | Steady State, Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 186 | °C/W | Steady State, Note 6 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Input Capacitance | Ciss | 41 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 4.4 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 2.6 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 2 | ||
| Gate Resistance | Rg | 900 | Ω | f = 1MHz, VGS = 0V, VDS = 0V | 2 | ||
| Total Gate Charge | Qg | 0.4 | nC | VGS = 4.5V, VDS = 10V, ID = 250mA | 2 | ||
| Gate-Source Charge | Qgs | 0.2 | nC | VGS = 4.5V, VDS = 10V, ID = 250mA | 2 | ||
| Gate-Drain Charge | Qgd | 0.1 | nC | VGS = 4.5V, VDS = 10V, ID = 250mA | 2 | ||
| Turn-On Delay Time | tD(ON) | 3.7 | ns | VDD = 30V, VGS = 10V, Rg = 25Ω, ID = 200mA | 2 | ||
| Turn-On Rise Time | tR | 3.6 | ns | VDD = 30V, VGS = 10V, Rg = 25Ω, ID = 200mA | 2 | ||
| Turn-Off Delay Time | tD(OFF) | 102 | ns | VDD = 30V, VGS = 10V, Rg = 25Ω, ID = 200mA | 2 | ||
| Turn-Off Fall Time | tF | 22 | ns | VDD = 30V, VGS = 10V, Rg = 25Ω, ID = 200mA | 2 | ||
| Reverse Recovery Time | tRR | 20 | ns | IF =1A, di/dt = 100A/µs | 2 | ||
| Reverse Recovery Charge | QRR | 7.9 | nC | IF = 1A, di/dt = 100A/µs | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
DMN65D9L-7 - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
dmn65d9l-7-etched.step/dmn65d9l-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn65d9l-7.step/dmn65d9l-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
1e357d6b10f9c9a3, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).