component
DMN65D8LW-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
DMN65D8LW-7
Diodes Incorporated · MOSFETs · SOT-323
DMN65D8LW-7 from Diodes Incorporated, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, ESD protected to 1kV HBM by an internal gate protection diode, with VGSS rated ±20V and a gate threshold of 1.2V to 2.0V at ID = 250µA. |
| 2 | S | passive | Source terminal, with maximum continuous body diode current IS of 300mA. |
| 3 | D | passive | Drain terminal, with VDSS of 60V and continuous drain current of 300mA at VGS = 10V and TA = +25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-323 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0V, ID = 250µA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60V, VGS = 0V | 3 | ||
| Gate-Body Leakage | IGSS | -5 | 5 | µA | VGS = ±20V, VDS = 0V | 3 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 2 | V | VDS = VGS, ID = 250µA | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 2 | 3 | Ω | VGS = 10V, ID = 0.115A | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 2.5 | 4 | Ω | VGS = 5V, ID = 0.115A | 3 | |
| Forward Transconductance | gFS | 80 | 290 | mS | VDS = 10V, ID = 0.115A | 3 | |
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS = 0V, IS = 115mA | 3 | |
| Input Capacitance | Ciss | 22 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 3 | ||
| Output Capacitance | Coss | 3.2 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 2 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 3 | ||
| Gate Resistance | RG | 79.9 | Ω | VDS = 0V, VGS = 0V, f = 1.0MHz | 3 | ||
| Total Gate Charge VGS = 10V | Qg | 0.87 | nC | VGS = 10V, VDS = 30V, ID = 150mA | 3 | ||
| Total Gate Charge VGS = 4.5V | Qg | 0.43 | nC | VGS = 4.5V, VDS = 30V, ID = 150mA | 3 | ||
| Gate-Source Charge | Qgs | 0.11 | nC | VDS = 30V, ID = 150mA | 3 | ||
| Gate-Drain Charge | Qgd | 0.11 | nC | VDS = 30V, ID = 150mA | 3 | ||
| Turn-On Delay Time | tD(on) | 2.7 | nS | VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25Ω | 3 | ||
| Turn-On Rise Time | tr | 2.8 | nS | VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25Ω | 3 | ||
| Turn-Off Delay Time | tD(off) | 12.6 | nS | VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25Ω | 3 | ||
| Turn-Off Fall Time | tf | 7.3 | nS | VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25Ω | 3 | ||
| Drain-Source Voltage | VDSS | 60 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TA = +25°C | 2 | |
| Continuous Drain Current VGS = 10V | ID | 300 | mA | Steady state, TA = +25°C, Note 6 | 2 | ||
| Continuous Drain Current VGS = 10V | ID | 230 | mA | Steady state, TA = +70°C, Note 6 | 2 | ||
| Continuous Drain Current VGS = 5V | ID | 260 | mA | Steady state, TA = +25°C, Note 6 | 2 | ||
| Continuous Drain Current VGS = 5V | ID | 210 | mA | Steady state, TA = +70°C, Note 6 | 2 | ||
| Pulsed Drain Current | IDM | 800 | mA | 10µs pulse, duty cycle = 1% | 2 | ||
| Maximum Body Diode Continuous Current | IS | 300 | mA | Note 6 | 2 | ||
| Total Power Dissipation | PD | 300 | mW | Note 5 | 2 | ||
| Total Power Dissipation | PD | 432 | mW | Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 398 | °C/W | Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 290 | °C/W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 142 | °C/W | Note 5 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
DMN65D8LW-7 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
dmn65d8lw-7-etched.step/dmn65d8lw-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn65d8lw-7.step/dmn65d8lw-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
cf184b7116fb51fe, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).