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Contents

README

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DMN65D8LQ-HXY

HXY MOSFET · MOSFETs · SOT-23

DMN65D8LQ-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Controls channel conduction. VGS(th) typ 1.2V (0.7V-1.9V). Max VGS ±20V. RDS(on) typ 1Ω @ VGS=10V, 1.3Ω @ VGS=5V. Total gate charge Qg typ 1.7nC @ VGS=4.5V.
2 S passive Source. Reference terminal for VGS. Body diode anode: VSD ≤ 1.2V @ IS=0.2A, IS max 0.3A.
3 D passive Drain. Switched terminal. BVDSS ≥ 60V (typ 68V). Continuous ID = 0.3A @ TA=25°C (0.19A @ TA=100°C), pulsed IDM = 0.8A. Body diode cathode.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Ordering variants

Same part, different packaging or reel option.

  • DMN65D8LQ-HXY

CAD (KiCad official)

  • Symbol: DMN65D8LQ-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dmn65d8lq-hxy-etched.step / dmn65d8lq-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn65d8lq-hxy.step / dmn65d8lq-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (None pp, sha256 2f930b0226e823d2, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF