component

DMN63D8LW-13

Public Made by Adom

by adom

Diodes Incorporated MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsdmn63d8lw-13factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 22d ago
viewers dmn63d8lw-13: viewers · Ray 22d ago
dmn63d8lw-13-etched.glb dmn63d8lw-13: factory component page (tier=lcsc) · Ray 22d ago
dmn63d8lw-13-etched.step dmn63d8lw-13: factory component page (tier=lcsc) · Ray 22d ago
dmn63d8lw-13-hero.glb dmn63d8lw-13: hero GLB from the etched model (keeps the MPN mark) · Ray 22d ago
dmn63d8lw-13-hero.overlay.json Publish 0.1.0 · Ray 22d ago
dmn63d8lw-13.glb Publish 0.1.0 · Ray 22d ago
dmn63d8lw-13.kicad_mod Publish 0.1.0 · Ray 22d ago
dmn63d8lw-13.kicad_sym Publish 0.1.0 · Ray 22d ago
dmn63d8lw-13.lbr Publish 0.1.0 · Ray 22d ago
dmn63d8lw-13.step Publish 0.1.0 · Ray 22d ago
package.json Publish 0.1.0 · Ray 22d ago
page.json dmn63d8lw-13: specified limits as data (metadata.characteristics, 23 rows from the datasheet) · Ray 16d ago
README.md dmn63d8lw-13: specified limits as data (metadata.characteristics, 23 rows from the datasheet) · Ray 16d ago

DMN63D8LW-13

Diodes Incorporated · MOSFETs · SOT-323

DMN63D8LW-13 from Diodes Incorporated, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; ESD protected up to 1kV by an internal gate protection diode, with VGSS rated ±20V and threshold VGS(TH) of 0.8V min to 1.5V max.
2 S passive Source terminal of the N-channel MOSFET, with body diode forward voltage VSD of 0.8V typ and 1.2V max at IS = 115mA.
3 D passive Drain terminal with V(BR)DSS of 30V and continuous ID of 380mA at VGS = 10V, TA = +25°C (RDS(ON) max 2.8Ω).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250A 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30V, VGS = 0V 2
Gate-Source Leakage IGSS -10 10 A VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 0.8 1.5 V VDS = VGS, ID = 250A 2
Static Drain-Source On-Resistance RDS(ON) 2.8 Ω VGS = 10.0V, ID = 250mA 2
Static Drain-Source On-Resistance RDS(ON) 3.8 Ω VGS = 5.0V, ID = 250mA 2
Static Drain-Source On-Resistance RDS(ON) 4.2 Ω VGS = 4.5V, ID = 250mA 2
Static Drain-Source On-Resistance RDS(ON) 4.5 Ω VGS = 4.0V, ID = 250mA 2
Static Drain-Source On-Resistance RDS(ON) 13 Ω VGS = 2.5V, ID = 10mA 2
Forward Transconductance gFS 80 mS VDS = 10V, ID = 0.115A 2
Diode Forward Voltage VSD 0.8 1.2 V VGS = 0V, IS = 115mA 2
Drain-Source Voltage VDSS 30 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 380 mA VGS = 10V, steady state, TA = +25°C (Note 6) 2
Continuous Drain Current ID 300 mA VGS = 10V, steady state, TA = +70°C (Note 6) 2
Continuous Drain Current ID 430 mA VGS = 10V, t<5s, TA = +25°C (Note 6) 2
Continuous Drain Current ID 340 mA VGS = 10V, t<5s, TA = +70°C (Note 6) 2
Pulsed Drain Current IDM 1.2 A 10µs pulse, duty cycle = 1% (Note 6) 2
Total Power Dissipation PD 300 mW Device mounted on FR-4 PCB, minimum recommended pad layout (Note 5) 2
Thermal Resistance, Junction to Ambient, Steady State RθJA 426 °C/W Device mounted on FR-4 PCB, minimum recommended pad layout (Note 5) 2
Total Power Dissipation PD 420 mW Device mounted on 1in x 1in FR-4 PCB, high coverage 2oz copper, single sided (Note 6) 2
Thermal Resistance, Junction to Ambient, Steady State RθJA 301 °C/W Device mounted on 1in x 1in FR-4 PCB, high coverage 2oz copper, single sided (Note 6) 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2

CAD (KiCad official)

  • Symbol: DMN63D8LW-13
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: dmn63d8lw-13-etched.step / dmn63d8lw-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn63d8lw-13.step / dmn63d8lw-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 3f67c8a4c708a426, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF