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DMN63D8LV-7

Diodes Incorporated · MOSFETs · SOT-563

DMN63D8LV-7 from Diodes Incorporated, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of MOSFET 2 (bottom-left in top view); ESD-protected gate device, VDSS 30V.
2 G2 input Gate of MOSFET 2, ESD protected, with VGSS rating of ±20V.
3 D1 passive Drain of MOSFET 1, with VDSS 30V and continuous ID up to 260mA at VGS=10V, TA=25°C.
4 S1 passive Source of MOSFET 1 (top-right in top view); ESD-protected gate device, VDSS 30V.
5 G1 input Gate of MOSFET 1, ESD protected, with VGSS rating of ±20V.
6 D2 passive Drain of MOSFET 2, with VDSS 30V and continuous ID up to 260mA at VGS=10V, TA=25°C.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-563
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 30 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current (VGS = 10V, steady state, TA = 25°C) ID 260 mA VGS = 10V, steady state, TA = 25°C (Note 5) 2
Continuous Drain Current (VGS = 10V, steady state, TA = 70°C) ID 200 mA VGS = 10V, steady state, TA = 70°C (Note 5) 2
Continuous Drain Current (VGS = 5V, steady state, TA = 25°C) ID 220 mA VGS = 5V, steady state, TA = 25°C (Note 5) 2
Continuous Drain Current (VGS = 5V, steady state, TA = 70°C) ID 160 mA VGS = 5V, steady state, TA = 70°C (Note 5) 2
Pulsed Drain Current IDM 800 mA 10μs pulse, duty cycle = 1% 2
Total Power Dissipation PD 450 mW Note 5 2
Thermal Resistance, Junction to Ambient RθJA 281 °C/W Note 5 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250μA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30V, VGS = 0V 2
Gate-Body Leakage IGSS -10 10 μA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 0.8 1.5 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(ON) 2.8 Ω VGS = 10.0V, ID = 250mA 2
Static Drain-Source On-Resistance RDS(ON) 3.8 Ω VGS = 5.0V, ID = 250mA 2
Static Drain-Source On-Resistance RDS(ON) 4.2 Ω VGS = 4.5V, ID = 250mA 2
Static Drain-Source On-Resistance RDS(ON) 4.5 Ω VGS = 4.0V, ID = 250mA 2
Static Drain-Source On-Resistance RDS(ON) 13 Ω VGS = 2.5V, ID = 10mA 2
Forward Transconductance gFS 80 mS VDS = 10V, ID = 0.115A 2
Diode Forward Voltage VSD 0.8 1.2 V VGS = 0V, IS = 115mA 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: DMN63D8LV-7
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: dmn63d8lv-7-etched.step / dmn63d8lv-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn63d8lv-7.step / dmn63d8lv-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 4e05142593646201, retrieved 2026-11-12, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF