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DMN63D8LV-7
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Diodes Incorporated MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DMN63D8LV-7
Diodes Incorporated · MOSFETs · SOT-563
DMN63D8LV-7 from Diodes Incorporated, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of MOSFET 2 (bottom-left in top view); ESD-protected gate device, VDSS 30V. |
| 2 | G2 | input | Gate of MOSFET 2, ESD protected, with VGSS rating of ±20V. |
| 3 | D1 | passive | Drain of MOSFET 1, with VDSS 30V and continuous ID up to 260mA at VGS=10V, TA=25°C. |
| 4 | S1 | passive | Source of MOSFET 1 (top-right in top view); ESD-protected gate device, VDSS 30V. |
| 5 | G1 | input | Gate of MOSFET 1, ESD protected, with VGSS rating of ±20V. |
| 6 | D2 | passive | Drain of MOSFET 2, with VDSS 30V and continuous ID up to 260mA at VGS=10V, TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-563 |
| Category | Transistors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current (VGS = 10V, steady state, TA = 25°C) | ID | 260 | mA | VGS = 10V, steady state, TA = 25°C (Note 5) | 2 | ||
| Continuous Drain Current (VGS = 10V, steady state, TA = 70°C) | ID | 200 | mA | VGS = 10V, steady state, TA = 70°C (Note 5) | 2 | ||
| Continuous Drain Current (VGS = 5V, steady state, TA = 25°C) | ID | 220 | mA | VGS = 5V, steady state, TA = 25°C (Note 5) | 2 | ||
| Continuous Drain Current (VGS = 5V, steady state, TA = 70°C) | ID | 160 | mA | VGS = 5V, steady state, TA = 70°C (Note 5) | 2 | ||
| Pulsed Drain Current | IDM | 800 | mA | 10μs pulse, duty cycle = 1% | 2 | ||
| Total Power Dissipation | PD | 450 | mW | Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 281 | °C/W | Note 5 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30V, VGS = 0V | 2 | ||
| Gate-Body Leakage | IGSS | -10 | 10 | μA | VGS = ±20V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.8 | 1.5 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2.8 | Ω | VGS = 10.0V, ID = 250mA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 3.8 | Ω | VGS = 5.0V, ID = 250mA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 4.2 | Ω | VGS = 4.5V, ID = 250mA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 4.5 | Ω | VGS = 4.0V, ID = 250mA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 13 | Ω | VGS = 2.5V, ID = 10mA | 2 | ||
| Forward Transconductance | gFS | 80 | mS | VDS = 10V, ID = 0.115A | 2 | ||
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS = 0V, IS = 115mA | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
DMN63D8LV-7 - Footprint:
Package_TO_SOT_SMD:SOT-563 - 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files:
dmn63d8lv-7-etched.step/dmn63d8lv-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn63d8lv-7.step/dmn63d8lv-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
4e05142593646201, retrieved 2026-11-12, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMN63D8LV-7
**Diodes Incorporated** · MOSFETs · SOT-563
DMN63D8LV-7 from Diodes Incorporated, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of MOSFET 2 (bottom-left in top view); ESD-protected gate device, VDSS 30V. |
| 2 | G2 | input | Gate of MOSFET 2, ESD protected, with VGSS rating of ±20V. |
| 3 | D1 | passive | Drain of MOSFET 1, with VDSS 30V and continuous ID up to 260mA at VGS=10V, TA=25°C. |
| 4 | S1 | passive | Source of MOSFET 1 (top-right in top view); ESD-protected gate device, VDSS 30V. |
| 5 | G1 | input | Gate of MOSFET 1, ESD protected, with VGSS rating of ±20V. |
| 6 | D2 | passive | Drain of MOSFET 2, with VDSS 30V and continuous ID up to 260mA at VGS=10V, TA=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-563 |
| Category | Transistors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 30 | V | | 2 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 2 |
| Continuous Drain Current (VGS = 10V, steady state, TA = 25°C) | ID | | | 260 | mA | VGS = 10V, steady state, TA = 25°C (Note 5) | 2 |
| Continuous Drain Current (VGS = 10V, steady state, TA = 70°C) | ID | | | 200 | mA | VGS = 10V, steady state, TA = 70°C (Note 5) | 2 |
| Continuous Drain Current (VGS = 5V, steady state, TA = 25°C) | ID | | | 220 | mA | VGS = 5V, steady state, TA = 25°C (Note 5) | 2 |
| Continuous Drain Current (VGS = 5V, steady state, TA = 70°C) | ID | | | 160 | mA | VGS = 5V, steady state, TA = 70°C (Note 5) | 2 |
| Pulsed Drain Current | IDM | | | 800 | mA | 10μs pulse, duty cycle = 1% | 2 |
| Total Power Dissipation | PD | | | 450 | mW | Note 5 | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 281 | °C/W | Note 5 | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS = 0V, ID = 250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 30V, VGS = 0V | 2 |
| Gate-Body Leakage | IGSS | -10 | | 10 | μA | VGS = ±20V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.8 | | 1.5 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 2.8 | Ω | VGS = 10.0V, ID = 250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 3.8 | Ω | VGS = 5.0V, ID = 250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 4.2 | Ω | VGS = 4.5V, ID = 250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 4.5 | Ω | VGS = 4.0V, ID = 250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 13 | Ω | VGS = 2.5V, ID = 10mA | 2 |
| Forward Transconductance | gFS | 80 | | | mS | VDS = 10V, ID = 0.115A | 2 |
| Diode Forward Voltage | VSD | | 0.8 | 1.2 | V | VGS = 0V, IS = 115mA | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 | 1 |
## CAD (KiCad official)
- Symbol: `DMN63D8LV-7`
- Footprint: `Package_TO_SOT_SMD:SOT-563`
- 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files: `dmn63d8lv-7-etched.step` / `dmn63d8lv-7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn63d8lv-7.step` / `dmn63d8lv-7.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/DMN63D8LV-7.pdf) (6 pp, sha256 `4e05142593646201`, retrieved 2026-11-12, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmn63d8lv-7-datasheet.pdf)