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DMN63D8LDW-13

Public Made by Adom

by adom

DIODES INCORPORATED Global Sourcing Parts, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

DMN63D8LDW-13

DIODES INCORPORATED · Global Sourcing Parts · SOT-363

DMN63D8LDW-13 from DIODES INCORPORATED, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of Q1 N-channel MOSFET, shown at the bottom-left of the top-view pin-out.
2 G1 input Gate of Q1 N-channel MOSFET with internal gate protection diode (ESD protected), VGSS rated ±20V.
3 D2 passive Drain of Q2 N-channel MOSFET, VDSS rated 30V.
4 S2 passive Source of Q2 N-channel MOSFET, shown at the top-right of the top-view pin-out.
5 G2 input Gate of Q2 N-channel MOSFET with internal gate protection diode (ESD protected), VGSS rated ±20V.
6 D1 passive Drain of Q1 N-channel MOSFET, VDSS rated 30V.

Key specifications

Parameter Value
Manufacturer DIODES INCORPORATED
Package SOT-363
Category Global Sourcing Parts
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30V, VGS = 0V 2
Gate-Body Leakage IGSS -10 10 µA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 0.8 1.5 V VDS = VGS, ID = 250µA 2
Static Drain-Source On-Resistance RDS(ON) 2.8 Ω VGS = 10.0V, ID = 250mA 2
Static Drain-Source On-Resistance RDS(ON) 3.8 Ω VGS = 5V, ID = 250mA 2
Static Drain-Source On-Resistance RDS(ON) 4.2 Ω VGS = 4.5V, ID = 250mA 2
Static Drain-Source On-Resistance RDS(ON) 4.5 Ω VGS = 4.0V, ID = 250mA 2
Static Drain-Source On-Resistance RDS(ON) 13 Ω VGS = 2.5V, ID = 10mA 2
Forward Transconductance gFS 80 mS VDS = 10V, ID = 0.115A 2
Diode Forward Voltage VSD 0.8 1.2 V VGS = 0V, IS = 115mA 2
Input Capacitance Ciss 22 pF VDS = 25V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 3.2 pF VDS = 25V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 2 pF VDS = 25V, VGS = 0V, f = 1.0MHz 2
Gate Resistance RG 79.9 Ω VDS = 0V, VGS = 0V, f = 1.0MHz 2
Total Gate Charge (VGS = 10V) Qg 0.87 nC VDS = 30V, ID = 150mA 2
Total Gate Charge (VGS = 4.5V) Qg 0.43 nC VDS = 30V, ID = 150mA 2
Gate-Source Charge Qgs 0.11 nC VDS = 30V, ID = 150mA 2
Gate-Drain Charge Qgd 0.11 nC VDS = 30V, ID = 150mA 2
Turn-On Delay Time tD(ON) 3.3 ns VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25Ω 2
Turn-On Rise Time tR 3.2 ns VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25Ω 2
Turn-Off Delay Time tD(OFF) 12 ns VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25Ω 2
Turn-Off Fall Time tF 6.3 ns VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25Ω 2
Drain-Source Voltage VDSS 30 V TA = +25°C 2
Gate-Source Voltage VGSS -20 20 V TA = +25°C 2
Continuous Drain Current (Note 5) ID 220 mA VGS = 10V, Steady State, TA = +25°C 2
Continuous Drain Current (Note 5) ID 170 mA VGS = 10V, Steady State, TA = +70°C 2
Continuous Drain Current (Note 6) ID 260 mA VGS = 10V, Steady State, TA = +25°C 2
Continuous Drain Current (Note 6) ID 210 mA VGS = 10V, Steady State, TA = +70°C 2
Pulsed Drain Current IDM 800 mA 10s Pulse, Duty Cycle = 1% 2
Total Power Dissipation (Note 5) PD 300 mW TA = +25°C 2
Total Power Dissipation (Note 6) PD 400 mW TA = +25°C 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Thermal Resistance, Junction to Ambient (Note 5) RθJA 435 °C/W Note 5 2
Thermal Resistance, Junction to Ambient (Note 6) RθJA 330 °C/W Note 6 2
Thermal Resistance, Junction to Case (Note 6) RθJC 139 °C/W Note 6 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: DMN63D8LDW-13
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: dmn63d8ldw-13-etched.step / dmn63d8ldw-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn63d8ldw-13.step / dmn63d8ldw-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DIODES INCORPORATED datasheet (6 pp, sha256 8eed3829a9db6108, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF