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DMN63D8L-HXY

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HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMN63D8L-HXY

HXY MOSFET · MOSFETs · SOT-23

DMN63D8L-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with an absolute maximum gate-source voltage of ±20V and a threshold of 0.8V to 1.5V.
2 S passive Source terminal of the N-channel MOSFET, normally tied to the low-side or ground reference of the switched load.
3 D passive Drain; rated for 30V drain-source voltage and 0.1A continuous drain current at TA=25℃.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID 0.1 A TJ=150℃, TA=25℃ 1
Continuous Drain Current ID 0.07 A TJ=150℃, TA=100℃ 1
Drain Current-Pulsed IDM 0.65 A Note 1 1
Maximum Power Dissipation PD 0.35 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 200 ℃/W Note 2 1
Drain-Source Breakdown Voltage VDS 30 V VGS = 0V, ID = 10µA 2
Zero Gate Voltage Drain Current IDSS 0.2 µA VDS =30V,VGS = 0V 2
Gate-Source leakage current IGSS -2 2 µA VGS =±20V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 0.8 1.5 V VDS = 3V, ID =100µA 2
Drain-Source On-Resistance RDS(on) 2.2 Ω VGS = 10V, ID =10mA 2
Drain-Source On-Resistance RDS(on) 3 Ω VGS =4.5V,ID =1mA 2
Forward Transconductance gFS 20 mS VDS =3V, ID = 10mA 2
Input Capacitance Ciss 13 pF VDS =5V,VGS =0V,f =1MHz 2
Output Capacitance Coss 9 pF VDS =5V,VGS =0V,f =1MHz 2
Reverse Transfer Capacitance Crss 4 pF VDS =5V,VGS =0V,f =1MHz 2
Turn-On Delay Time td(on) 15 ns VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω 2
Rise Time tr 35 ns VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω 2
Turn-Off Delay Time td(off) 80 ns VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω 2
Fall Time tf 80 ns VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω 2

CAD (KiCad official)

  • Symbol: DMN63D8L-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dmn63d8l-hxy-etched.step / dmn63d8l-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn63d8l-hxy.step / dmn63d8l-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 2e412a8c47e6341d, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF