component

DMN63D8L-7

Public Made by Adom

by adom

Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsdmn63d8l-7factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
dmn63d8l-7 / README.md
History Download
Ray dmn63d8l-7: specified limits as data (metadata.characteristics, 23 rows from the datasheet) 58e8b2c 23d ago

DMN63D8L-7

Diodes Incorporated · MOSFETs · SOT-23

DMN63D8L-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate, ESD-protected through an internal gate protection diode, with VGSS rated ±20 V and threshold VGS(TH) of 0.8 V min to 1.5 V max at ID = 250 µA.
2 S passive Source terminal of the N-channel MOSFET, with continuous drain current of 350 mA at VGS = 10 V and TA = +25°C.
3 D passive Drain terminal of the N-channel MOSFET, with VDSS of 30 V and RDS(ON) max of 2.8 Ω at VGS = 10 V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250A 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30V, VGS = 0V 2
Gate-Source Leakage IGSS -10 10 µA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 0.8 1.5 V VDS = VGS, ID = 250A 2
Static Drain-Source On-Resistance RDS(ON) 2.8 Ω VGS = 10.0V, ID = 250mA 2
Static Drain-Source On-Resistance RDS(ON) 3.8 Ω VGS = 5.0V, ID = 250mA 2
Static Drain-Source On-Resistance RDS(ON) 4.2 Ω VGS = 4.5V, ID = 250mA 2
Static Drain-Source On-Resistance RDS(ON) 4.5 Ω VGS = 4.0V, ID = 250mA 2
Static Drain-Source On-Resistance RDS(ON) 13 Ω VGS = 2.5V, ID = 10mA 2
Forward Transconductance gFS 80 mS VDS = 10V, ID = 0.115A 2
Diode Forward Voltage VSD 0.8 1.2 V VGS = 0V, IS = 115mA 2
Drain-Source Voltage VDSS 30 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current, steady state ID 350 mA VGS = 10V, Steady State, TA = +25°C (Note 6) 2
Continuous Drain Current, steady state ID 280 mA VGS = 10V, Steady State, TA = +70°C (Note 6) 2
Continuous Drain Current, t<5s ID 400 mA VGS = 10V, t<5s, TA = +25°C (Note 6) 2
Continuous Drain Current, t<5s ID 310 mA VGS = 10V, t<5s, TA = +70°C (Note 6) 2
Pulsed Drain Current IDM 1.2 A 10µs Pulse, Duty Cycle = 1% (Note 6) 2
Total Power Dissipation PD 350 mW Note 5: FR-4 PCB, minimum recommended pad layout 2
Thermal Resistance, Junction to Ambient, Steady State RθJA 359 °C/W Note 5: FR-4 PCB, minimum recommended pad layout 2
Total Power Dissipation PD 520 mW Note 6: 1" x 1" FR-4 PCB, high coverage 2oz. copper, single sided 2
Thermal Resistance, Junction to Ambient, Steady State RθJA 243 °C/W Note 6: 1" x 1" FR-4 PCB, high coverage 2oz. copper, single sided 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2

CAD (KiCad official)

  • Symbol: DMN63D8L-7
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dmn63d8l-7-etched.step / dmn63d8l-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn63d8l-7.step / dmn63d8l-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 c673cd0d1ed8a489, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF