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DMN62D0UWQ-13

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Diodes Incorporated MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsdmn62d0uwq-13factory-2.0.0extractor-text

Verified DMN62D0UWQ-13

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: DMN62D0UWQ-13 · SOT-323 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 7-page datasheet
  • ✓distributor: lcsc C7172028, digikey 31-DMN62D0UWQ-13TR-ND, mouser 621-DMN62D0UWQ-13
  • ✓family: SOT-323_SC-70
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-op4inxvw/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: body within the datasheet's package drawing (datasheet p.6)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ dmn62d0uwq-13.kicad_sym✓ dmn62d0uwq-13.kicad_mod✓ dmn62d0uwq-13.step
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DMN62D0UWQ-13

Diodes Incorporated · MOSFETs · SOT-323

DMN62D0UWQ-13 from Diodes Incorporated, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; ESD-protected via an internal gate protection diode, with VGSS rated ±20 V and VGS(TH) of 0.5 V to 1.0 V at ID = 250µA.
2 S passive Source terminal of the N-channel MOSFET, which is also the anode side of the body diode (continuous IS 0.4 A).
3 D passive Drain terminal of the N-channel MOSFET, rated VDSS 60 V with continuous ID of 340 mA at VGS = 4.5V, TA = +25°C.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V TA = +25°C 2
Gate-Source Voltage VGSS -20 20 V TA = +25°C 2
Continuous Drain Current, steady state ID 340 mA VGS = 4.5V, TA = +25°C, Note 6 2
Continuous Drain Current, steady state ID 270 mA VGS = 4.5V, TA = +70°C, Note 6 2
Continuous Drain Current, t<5s ID 400 mA VGS = 4.5V, TA = +25°C, Note 6 2
Continuous Drain Current, t<5s ID 300 mA VGS = 4.5V, TA = +70°C, Note 6 2
Maximum Continuous Body Diode Forward Current IS 0.4 A Note 6 2
Pulsed Drain Current IDM 1.2 A 10µs Pulse, Duty Cycle = 1% 2
Pulsed Source Current ISM 1.2 A 10μs Pulse, Duty Cycle = 1% 2
Total Power Dissipation (Note 5) PD 320 mW Note 5, TA = +25°C 2
Thermal Resistance, Junction to Ambient, steady state (Note 5) RθJA 398 °C/W Steady State, Note 5 2
Thermal Resistance, Junction to Ambient, t<5s (Note 5) RθJA 306 °C/W t<5s, Note 5 2
Total Power Dissipation (Note 6) PD 470 mW Note 6, TA = +25°C 2
Thermal Resistance, Junction to Ambient, steady state (Note 6) RθJA 273 °C/W Steady State, Note 6 2
Thermal Resistance, Junction to Ambient, t<5s (Note 6) RθJA 235 °C/W t<5s, Note 6 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 10µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60V, VGS = 0V 2
Gate-Source Leakage IGSS -10 10 µA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 0.5 1 V VDS = 10V, ID = 250µA 2
Static Drain-Source On-Resistance RDS(ON) 1.2 2 Ω VGS = 4.5V, ID = 0.1A 2
Static Drain-Source On-Resistance RDS(ON) 1.4 2.5 Ω VGS = 2.5V, ID = 0.05A 2
Static Drain-Source On-Resistance RDS(ON) 1.8 3 Ω VGS = 1.8V, ID = 0.05A 2
Diode Forward Voltage VSD 0.8 1.3 V VGS = 0V, IS = 115mA 2
Forward Transconductance /Yfs/ 1.8 S VDS =10V, ID = 0.2A 2
Input Capacitance Ciss 32 pF VDS = 30V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 3.9 pF VDS = 30V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 2.4 pF VDS = 30V, VGS = 0V, f = 1.0MHz 2
Gate Resistance Rg 101 Ω f = 1MHz , VGS = 0V, VDS = 0V 2
Total Gate Charge Qg 0.5 nC VGS = 4.5V, VDS = 10V, ID = 250mA 2
Gate-Source Charge Qgs 0.09 nC VGS = 4.5V, VDS = 10V, ID = 250mA 2
Gate-Drain Charge Qgd 0.09 nC VGS = 4.5V, VDS = 10V, ID = 250mA 2
Turn-On Delay Time tD(ON) 2.4 ns VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA 2
Turn-On Rise Time tR 2.5 ns VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA 2
Turn-Off Delay Time tD(OFF) 22.6 ns VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA 2
Turn-Off Fall Time tF 12.5 ns VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish  Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: DMN62D0UWQ-13
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: dmn62d0uwq-13-etched.step / dmn62d0uwq-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn62d0uwq-13.step / dmn62d0uwq-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 5ef88622518cb204, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF