# DMN62D0U-HXY

**HXY MOSFET** · MOSFETs · SOT-23

DMN62D0U-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±20 V, with a typical threshold of 1.2 V (0.7 to 1.9 V) at ID=250 µA and a gate-protection diode shown to source. |
| 2 | S | passive | Source; connected to the body diode, with continuous drain current of 0.3 A at TA=25℃ and diode forward current IS of 0.3 A max. |
| 3 | D | passive | Drain; drain-source voltage is rated at 60 V, continuous current 0.3 A at TA=25℃ and pulsed 0.8 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current (TA=25℃) | ID |  |  | 0.3 | A | TJ=150℃; TA=25℃ | 1 |
| Continuous Drain Current (TA=100℃) | ID |  |  | 0.19 | A | TJ=150℃; TA=100℃ | 1 |
| Drain Current-Pulsed | IDM |  |  | 0.8 | A | Note 1 | 1 |
| Maximum Power Dissipation | PD |  |  | 0.35 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 350 | ℃/W | Note 2 | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | 68 |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=60V,VGS=0V | 2 |
| Gate-Body Leakage Current (VGS=±10V) | IGSS |  | 100 | 500 | nA | VGS=±10V,VDS=0V | 2 |
| Gate-Body Leakage Current (VGS=±20V) | IGSS |  | 4 | 10 | uA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.7 | 1.2 | 1.9 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (VGS=5V) | RDS(ON) |  | 1.3 | 3 | Ω | VGS=5V, ID=0.1A | 2 |
| Drain-Source On-State Resistance (VGS=10V) | RDS(ON) |  | 1 | 2 | Ω | VGS=10V, ID=0.1A | 2 |
| Forward Transconductance | gFS | 0.1 |  |  | S | VDS=10V,ID=0.2A | 2 |
| Input Capacitance | Clss |  | 21 | 50 | PF | VDS=25V,VGS=0V, F=1.0MHz | 2 |
| Output Capacitance | Coss |  | 11 | 25 | PF |  | 2 |
| Reverse Transfer Capacitance | Crss |  | 4.2 | 5 | PF |  | 2 |
| Total Gate Charge | Qg |  | 1.7 | 3 | nC | VDS=10V,ID=0.3A, VGS=4.5V | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=0.2A | 2 |
| Diode Forward Current | IS |  |  | 0.3 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `DMN62D0U-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `dmn62d0u-hxy-etched.step` / `dmn62d0u-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn62d0u-hxy.step` / `dmn62d0u-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758127428440989696) (7 pp, sha256 `d4caac0475221f7c`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dmn62d0u-hxy-datasheet.pdf)