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DMN62D0U-7

Diodes Incorporated · MOSFETs · SOT-23

DMN62D0U-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin Name Type Function
1 G input Gate; ESD protected up to 1kV by an internal gate protection diode, with VGSS rated ±20V and threshold VGS(TH) of 0.5V to 1.0V at ID = 250µA.
2 S passive Source terminal of the N-channel MOSFET, connected to the body diode anode, with continuous body diode forward current IS of 0.4A.
3 D passive Drain terminal of the N-channel MOSFET with VDSS of 60V and continuous drain current of 380mA at TA = +25°C (VGS = 4.5V).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 380 mA VGS = 4.5V, steady state, TA = +25°C 2
Continuous Drain Current ID 300 mA VGS = 4.5V, steady state, TA = +70°C 2
Continuous Drain Current ID 430 mA VGS = 4.5V, t<5s, TA = +25°C 2
Continuous Drain Current ID 340 mA VGS = 4.5V, t<5s, TA = +70°C 2
Maximum Continuous Body Diode Forward Current IS 0.4 A Note 6 2
Pulsed Drain Current IDM 1.2 A 10µs pulse, duty cycle = 1%, Note 6 2
Total Power Dissipation PD 380 mW Note 5 2
Total Power Dissipation PD 590 mW Note 6 2
Thermal Resistance, Junction to Ambient RθJA 338 °C/W Steady state, Note 5 2
Thermal Resistance, Junction to Ambient RθJA 292 °C/W t<5s, Note 5 2
Thermal Resistance, Junction to Ambient RθJA 216 °C/W Steady state, Note 6 2
Thermal Resistance, Junction to Ambient RθJA 177 °C/W t<5s, Note 6 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 10µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60V, VGS = 0V 2
Gate-Source Leakage IGSS -10 10 µA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 0.5 1 V VDS = 10V, ID = 250µA 2
Diode Forward Voltage VSD 0.8 1.3 V VGS = 0V, IS = 115mA 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish  Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 1

CAD (land: KiCad; 3D: generated from the datasheet)

  • Symbol: DMN62D0U-7
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23, generated on the KiCad land (body 1.3 x 2.9 mm, terminals on the pads, 1.025 mm tall, datasheet A, nominal). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
  • 3D model files: dmn62d0u-7-etched.step / dmn62d0u-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn62d0u-7.step / dmn62d0u-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 17ffcfb07fec0906, retrieved 2026-11-12, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF