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Contents

README

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DMN62D0U-13

Diodes Incorporated · MOSFETs · SOT-23

DMN62D0U-13 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; ESD protected up to 1kV by an internal gate protection diode, with VGS rated ±20V and threshold of 0.5V to 1.0V.
2 S passive Source terminal of the N-channel MOSFET; body diode conducts to drain with continuous forward current up to 0.4A.
3 D passive Drain terminal of the N-channel MOSFET, rated 60V VDSS and 380mA continuous at TA = +25°C (VGS = 4.5V).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 10µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60V, VGS = 0V 2
Gate-Source Leakage IGSS -10 10 µA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 0.5 1 V VDS = 10V, ID = 250µA 2
Diode Forward Voltage VSD 0.8 1.3 V VGS = 0V, IS = 115mA 2
Drain-Source Voltage VDSS 60 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current (Note 6), steady state ID 380 mA VGS = 4.5V, TA = +25°C, steady state 2
Continuous Drain Current (Note 6), steady state ID 300 mA VGS = 4.5V, TA = +70°C, steady state 2
Continuous Drain Current (Note 6), t<5s ID 430 mA VGS = 4.5V, TA = +25°C, t<5s 2
Continuous Drain Current (Note 6), t<5s ID 340 mA VGS = 4.5V, TA = +70°C, t<5s 2
Maximum Continuous Body Diode Forward Current (Note 6) IS 0.4 A 2
Pulsed Drain Current (Note 6) IDM 1.2 A 10µs pulse, duty cycle = 1% 2
Total Power Dissipation (Note 5) PD 380 mW Note 5: FR-4 PCB, minimum recommended pad layout 2
Total Power Dissipation (Note 6) PD 590 mW Note 6: 1in x 1in FR-4 PCB, 2oz copper 2
Thermal Resistance, Junction to Ambient (Note 5), steady state RθJA 338 °C/W Steady state, Note 5 2
Thermal Resistance, Junction to Ambient (Note 5), t<5s RθJA 292 °C/W t<5s, Note 5 2
Thermal Resistance, Junction to Ambient (Note 6), steady state RθJA 216 °C/W Steady state, Note 6 2
Thermal Resistance, Junction to Ambient (Note 6), t<5s RθJA 177 °C/W t<5s, Note 6 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2

CAD (KiCad official)

  • Symbol: DMN62D0U-13
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dmn62d0u-13-etched.step / dmn62d0u-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn62d0u-13.step / dmn62d0u-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 17ffcfb07fec0906, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF