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DMN6140LQ-13
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Diodes Incorporated MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DMN6140LQ-13
Diodes Incorporated · MOSFETs · SOT-23-3
DMN6140LQ-13 from Diodes Incorporated, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with a gate threshold voltage of 1 V to 3 V at VDS = VGS, ID = 250µA and a maximum gate-source voltage of ±20 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with a maximum continuous body diode forward current of 1.5 A. |
| 3 | D | passive | Drain terminal of the N-channel MOSFET, rated for a 60 V drain-source voltage and 140mΩ maximum RDS(ON) at VGS = 10V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = 20V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 3 | V | VDS = VGS, ID = 250µA | 2 | |
| Static Drain-Source On-Resistance (VGS = 10V) | RDS(ON) | 92 | 140 | mΩ | VGS = 10V, ID = 1.8A | 2 | |
| Static Drain-Source On-Resistance (VGS = 4.5V) | RDS(ON) | 115 | 170 | mΩ | VGS = 4.5V, ID = 1.3A | 2 | |
| Diode Forward Voltage | VSD | 0.75 | 1 | V | VGS = 0V, IS = 0.45A | 2 | |
| Drain-Source Voltage | VDSS | 60 | V | 2 | |||
| Gate-Source Voltage | VGSS | 20 | V | 2 | |||
| Continuous Drain Current (Note 5) | ID | 1.6 | A | VGS = 10V, steady state, TA = +25°C | 2 | ||
| Continuous Drain Current (Note 5) | ID | 1.2 | A | VGS = 10V, steady state, TA = +70°C | 2 | ||
| Continuous Drain Current (Note 5) | ID | 2 | A | VGS = 10V, t < 10s, TA = +25°C | 2 | ||
| Continuous Drain Current (Note 6) | ID | 2.3 | A | VGS = 10V, steady state, TA = +25°C | 2 | ||
| Continuous Drain Current (Note 6) | ID | 1.8 | A | VGS = 10V, steady state, TA = +70°C | 2 | ||
| Continuous Drain Current (Note 6) | ID | 2.9 | A | VGS = 10V, t < 10s, TA = +25°C | 2 | ||
| Maximum Continuous Body Diode Forward Current (Note 6) | IS | 1.5 | A | 2 | |||
| Pulsed Drain Current | IDM | 10 | A | 10μs Pulse, Duty Cycle = 1% | 2 | ||
| Total Power Dissipation (Note 5) | PD | 0.7 | W | TA = +25°C | 2 | ||
| Total Power Dissipation (Note 5) | PD | 0.4 | W | TA = +70°C | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 183 | °C/W | Steady state | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 115 | °C/W | t < 10s | 2 | ||
| Total Power Dissipation (Note 6) | PD | 1.3 | W | TA = +25°C | 2 | ||
| Total Power Dissipation (Note 6) | PD | 0.8 | W | TA = +70°C | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 94 | °C/W | Steady state | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 61 | °C/W | t < 10s | 2 | ||
| Thermal Resistance, Junction to Case | RJC | 39 | °C/W | 2 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminal Connections: See Diagram Terminals: Finish, Matte Tin Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMN6140LQ-13 - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
dmn6140lq-13-etched.step/dmn6140lq-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn6140lq-13.step/dmn6140lq-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
dde94f961543229d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMN6140LQ-13
**Diodes Incorporated** · MOSFETs · SOT-23-3
DMN6140LQ-13 from Diodes Incorporated, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with a gate threshold voltage of 1 V to 3 V at VDS = VGS, ID = 250µA and a maximum gate-source voltage of ±20 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with a maximum continuous body diode forward current of 1.5 A. |
| 3 | D | passive | Drain terminal of the N-channel MOSFET, rated for a 60 V drain-source voltage and 140mΩ maximum RDS(ON) at VGS = 10V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 60V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = 20V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 1 | | 3 | V | VDS = VGS, ID = 250µA | 2 |
| Static Drain-Source On-Resistance (VGS = 10V) | RDS(ON) | | 92 | 140 | mΩ | VGS = 10V, ID = 1.8A | 2 |
| Static Drain-Source On-Resistance (VGS = 4.5V) | RDS(ON) | | 115 | 170 | mΩ | VGS = 4.5V, ID = 1.3A | 2 |
| Diode Forward Voltage | VSD | | 0.75 | 1 | V | VGS = 0V, IS = 0.45A | 2 |
| Drain-Source Voltage | VDSS | | | 60 | V | | 2 |
| Gate-Source Voltage | VGSS | | | 20 | V | | 2 |
| Continuous Drain Current (Note 5) | ID | | | 1.6 | A | VGS = 10V, steady state, TA = +25°C | 2 |
| Continuous Drain Current (Note 5) | ID | | | 1.2 | A | VGS = 10V, steady state, TA = +70°C | 2 |
| Continuous Drain Current (Note 5) | ID | | | 2 | A | VGS = 10V, t < 10s, TA = +25°C | 2 |
| Continuous Drain Current (Note 6) | ID | | | 2.3 | A | VGS = 10V, steady state, TA = +25°C | 2 |
| Continuous Drain Current (Note 6) | ID | | | 1.8 | A | VGS = 10V, steady state, TA = +70°C | 2 |
| Continuous Drain Current (Note 6) | ID | | | 2.9 | A | VGS = 10V, t < 10s, TA = +25°C | 2 |
| Maximum Continuous Body Diode Forward Current (Note 6) | IS | | | 1.5 | A | | 2 |
| Pulsed Drain Current | IDM | | | 10 | A | 10μs Pulse, Duty Cycle = 1% | 2 |
| Total Power Dissipation (Note 5) | PD | | | 0.7 | W | TA = +25°C | 2 |
| Total Power Dissipation (Note 5) | PD | | | 0.4 | W | TA = +70°C | 2 |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | | | 183 | °C/W | Steady state | 2 |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | | | 115 | °C/W | t < 10s | 2 |
| Total Power Dissipation (Note 6) | PD | | | 1.3 | W | TA = +25°C | 2 |
| Total Power Dissipation (Note 6) | PD | | | 0.8 | W | TA = +70°C | 2 |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | | | 94 | °C/W | Steady state | 2 |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | | | 61 | °C/W | t < 10s | 2 |
| Thermal Resistance, Junction to Case | RJC | | | 39 | °C/W | | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminal Connections: See Diagram Terminals: Finish, Matte Tin Annealed over Copper Leadframe. | 1 |
## CAD (KiCad official)
- Symbol: `DMN6140LQ-13`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files: `dmn6140lq-13-etched.step` / `dmn6140lq-13-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn6140lq-13.step` / `dmn6140lq-13.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8560103927166091264) (7 pp, sha256 `dde94f961543229d`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmn6140lq-13-datasheet.pdf)