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DMN6140L-13

Public Made by Adom

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Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

DMN6140L-13

Diodes Incorporated · MOSFETs · SOT-23

DMN6140L-13 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±20V (VGSS), with a gate threshold of 1V min to 3V max at ID = 250µA.
2 S passive Source terminal of the N-channel MOSFET, with a maximum continuous body diode forward current of 1.5A.
3 D passive Drain terminal; drain-source voltage is rated at 60V with continuous drain current up to 2.3A (Note 6, steady state, TA = +25°C) and pulsed drain current of 10A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = 20V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250µA 2
Static Drain-Source On-Resistance (VGS=10V) RDS(ON) 92 140 mΩ VGS = 10V, ID = 1.8A 2
Static Drain-Source On-Resistance (VGS=4.5V) RDS(ON) 115 170 mΩ VGS = 4.5V, ID = 1.3A 2
Diode Forward Voltage VSD 0.75 1 V VGS = 0V, IS = 0.45A 2
Drain-Source Voltage VDSS 60 V TA = +25°C 2
Gate-Source Voltage VGSS 20 V TA = +25°C 2
Continuous Drain Current (Note 5), steady state ID 1.6 A VGS = 10V, TA = +25°C, Steady State 2
Continuous Drain Current (Note 5), steady state ID 1.2 A VGS = 10V, TA = +70°C, Steady State 2
Continuous Drain Current (Note 5), t<10s ID 2 A VGS = 10V, TA = +25°C, t<10s 2
Continuous Drain Current (Note 5), t<10s ID 1.6 A VGS = 10V, TA = +70°C, t<10s 2
Continuous Drain Current (Note 6), steady state ID 2.3 A VGS = 10V, TA = +25°C, Steady State 2
Continuous Drain Current (Note 6), steady state ID 1.8 A VGS = 10V, TA = +70°C, Steady State 2
Continuous Drain Current (Note 6), t<10s ID 2.9 A VGS = 10V, TA = +25°C, t<10s 2
Continuous Drain Current (Note 6), t<10s ID 2.3 A VGS = 10V, TA = +70°C, t<10s 2
Maximum Continuous Body Diode Forward Current (Note 6) IS 1.5 A 2
Pulsed Drain Current IDM 10 A 10μs pulse, duty cycle = 1% 2
Total Power Dissipation (Note 5) PD 0.7 W TA = +25°C 2
Total Power Dissipation (Note 5) PD 0.4 W TA = +70°C 2
Total Power Dissipation (Note 6) PD 1.3 W TA = +25°C 2
Total Power Dissipation (Note 6) PD 0.8 W TA = +70°C 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Thermal Resistance, Junction to Ambient (Note 5), steady state RθJA 183 °C/W Steady State 2
Thermal Resistance, Junction to Ambient (Note 5), t<10s RθJA 115 °C/W t<10s 2
Thermal Resistance, Junction to Ambient (Note 6), steady state RθJA 94 °C/W Steady State 2
Thermal Resistance, Junction to Ambient (Note 6), t<10s RθJA 61 °C/W t<10s 2
Thermal Resistance, Junction to Case RθJC 39 °C/W 2
Forward Transfer Admittance /Yfs/ 2.2 S VDS = 15V, ID = 1.8A 2
Input Capacitance Ciss 315 pF VDS = 40V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 18 pF VDS = 40V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 16 pF VDS = 40V, VGS = 0V, f = 1.0MHz 2
Gate Resistance Rg 0.65 Ω VDS = 0V, VGS = 0V, f = 1.0MHz 2
Total Gate Charge (VGS = 10V) Qg 8.6 nC VDS = 30V, ID = 1.8A 2
Total Gate Charge (VGS = 5V) Qg 4.1 nC VDS = 30V, ID = 1.8A 2
Gate-Source Charge Qgs 1 nC VDS = 30V, ID = 1.8A 2
Gate-Drain Charge Qgd 1.7 nC VDS = 30V, ID = 1.8A 2
Turn-On Delay Time tD(on) 2.6 ns VDS = 30V, VGS = 10V, RG = 6.0Ω, ID = 1.8A 2
Turn-On Rise Time tr 3.6 ns VDS = 30V, VGS = 10V, RG = 6.0Ω, ID = 1.8A 2
Turn-Off Delay Time tD(off) 16.3 ns VDS = 30V, VGS = 10V, RG = 6.0Ω, ID = 1.8A 2
Turn-Off Fall Time tf 2.7 ns VDS = 30V, VGS = 10V, RG = 6.0Ω, ID = 1.8A 2
Reverse Recovery Time trr 16.8 ns IF = 1.8A, di/dt = 100A/µs 2
Reverse Recovery Charge Qrr 9 nC IF = 1.8A, di/dt = 100A/µs 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminal Connections: See Diagram  Terminals: Finish, Matte Tin Annealed over Copper Leadframe. 1

CAD (KiCad official)

  • Symbol: DMN6140L-13
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dmn6140l-13-etched.step / dmn6140l-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn6140l-13.step / dmn6140l-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 c2d2b52e30de5f8c, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF