component

DMN60H080DS-7

Public Made by Adom

by adom

Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Ray dmn60h080ds-7: specified limits as data (metadata.characteristics, 24 rows from the datasheet) f2157b6 17d ago

DMN60H080DS-7

Diodes Incorporated · MOSFETs · SOT-23

DMN60H080DS-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel enhancement MOSFET, with a gate protection diode shown in the equivalent circuit; the gate-source voltage is rated at ±20 V (VGSS).
2 S passive Source of the N-channel MOSFET; the datasheet gives no separate pin-level limit for this terminal, and the device is rated at a 600 V drain-source voltage (VDSS).
3 D passive Drain of the N-channel MOSFET, rated at a drain-source voltage of 600 V (VDSS) with continuous drain current of up to 80 mA at TA = +25°C (VGS = 10 V, on 1"x1" FR-4 PCB).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGSS -20 20 V 2
Drain-Source Voltage VDSS 600 V 2
Continuous Drain Current (Note 5) ID 70 mA VGS = 10V Steady State TA = +25°C 2
Continuous Drain Current (Note 5) ID 56 mA VGS = 10V Steady State TA = +70°C 2
Continuous Drain Current (Note 6) ID 80 mA VGS = 10V Steady State TA = +25°C 2
Continuous Drain Current (Note 6) ID 70 mA VGS = 10V Steady State TA = +70°C 2
Continuous Drain Current (Note 5) ID 40 mA VGS = 4.5V Steady State TA = +25°C 2
Continuous Drain Current (Note 5) ID 32 mA VGS = 4.5V Steady State TA = +70°C 2
Continuous Drain Current (Note 6) ID 50 mA VGS = 4.5V Steady State TA = +25°C 2
Continuous Drain Current (Note 6) ID 40 mA VGS = 4.5V Steady State TA = +70°C 2
Pulsed Drain Current IDM 0.2 A @ TSP = +25°C (Note 7) 2
Power Dissipation (Note 5) PD 0.7 W @TA = +25°C 2
Power Dissipation (Note 6) PD 1.1 W @TA = +25°C 2
Thermal Resistance, Junction to Ambient (Note 5) RθJA 174 °C/W @TA = +25°C 2
Thermal Resistance, Junction to Ambient (Note 6) RθJA 99 °C/W @TA = +25°C 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 600 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current TJ = +25°C IDSS 1 µA VDS = 600V, VGS = 0V 2
Gate-Body Leakage IGSS -10 10 µA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 1.5 3 V VDS = VGS, ID = 250µA 2
Gate Threshold Voltage VGS(TH) 1.5 2.6 V VDS = VGS, ID = 8µA 2
Static Drain-Source On-Resistance RDS(ON) 67 100 Ω VGS = 10V, ID = 60mA 2
Static Drain-Source On-Resistance RDS(ON) 95 290 Ω VGS = 4.5V, ID = 60mA 2
Diode Forward Voltage VSD 1.5 V VGS = 0V, IS = 50mA 2

CAD (KiCad official)

  • Symbol: DMN60H080DS-7
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dmn60h080ds-7-etched.step / dmn60h080ds-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn60h080ds-7.step / dmn60h080ds-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 7ec7bf36b3fcafd7, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF