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DMN60H080DS-13

Diodes Incorporated · MOSFETs · SOT-23

DMN60H080DS-13 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate, ESD-protected by an internal gate protection diode, with VGSS rated ±20V and threshold VGS(TH) of 1.5V to 3.0V at ID = 250µA.
2 S passive Source terminal of the N-channel MOSFET, shown at the bottom right of the top-view pin configuration.
3 D passive Drain terminal at the single top pin, with VDSS of 600V and continuous ID of 80mA at TA = +25°C (Note 6).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: DMN60H080DS-13
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dmn60h080ds-13-etched.step / dmn60h080ds-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn60h080ds-13.step / dmn60h080ds-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 7ec7bf36b3fcafd7, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF