main
History Download
Ray Publish 0.1.0 23245ef 17d ago

DMN6075SQ

Leiditech · MOSFETs · SOT-23

DMN6075SQ from Leiditech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V maximum and a threshold of 1.2 to 2.5 V at ID=250uA.
2 S passive Source; the datasheet gives a continuous source current IS of 2.3 A maximum and a pulsed source current of 9.2 A.
3 D passive Drain; VDS is rated 60 V maximum and continuous drain current is 3.0 A at TA=25℃.

Key specifications

Parameter Value
Manufacturer Leiditech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 80 100 mΩ VGS=10V, ID=2A 2
Static Drain-Source On-Resistance RDS(ON) 85 110 mΩ VGS=4.5V, ID=1A 2
Gate Threshold Voltage VGS(th) 1.2 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=48V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Total Gate Charge (4.5V) Qg 5 7 nC VDS=48V, VGS=4.5V, ID=2A 2
Gate-Source Charge Qgs 1.68 2.4 nC VDS=48V, VGS=4.5V, ID=2A 2
Gate-Drain Charge Qgd 1.9 2.7 nC VDS=48V, VGS=4.5V, ID=2A 2
Turn-On Delay Time Td(on) 1.6 3.2 ns VDD=30V, VGS=10V, RG=3.3, ID=2A 2
Rise Time Tr 7.2 13 ns VDD=30V, VGS=10V, RG=3.3, ID=2A 2
Turn-Off Delay Time Td(off) 25 50 ns VDD=30V, VGS=10V, RG=3.3, ID=2A 2
Fall Time Tf 14.4 28.8 ns VDD=30V, VGS=10V, RG=3.3, ID=2A 2
Input Capacitance Ciss 511 715 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 38 53 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 25 35 pF VDS=15V, VGS=0V, f=1MHz 2
Continuous Source Current IS 2.3 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 9.2 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TA=25℃ 3 A VGS @ 10V 1
Continuous Drain Current ID@TA=70℃ 1.8 A VGS @ 10V 1
Pulsed Drain Current IDM 9.2 A 1
Total Power Dissipation PD@TA=25℃ 1 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 125 ℃/W 1
Thermal Resistance Junction-Case RθJC 80 ℃/W 1

CAD (KiCad official)

  • Symbol: DMN6075SQ
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dmn6075sq-etched.step / dmn6075sq-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn6075sq.step / dmn6075sq.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Leiditech datasheet (5 pp, sha256 9cd9c70721acb80e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF