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Ray dmn6070sy-13: specified limits as data (metadata.characteristics, 24 rows from the datasheet) 829a4af

DMN6070SY-13

Diodes Incorporated · MOSFET · SOT-89

DMN6070SY-13 from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Controls the MOSFET channel; threshold voltage VGS(TH) is 1.0V min to 3.0V max, with an absolute-maximum VGS of ±20V.
2 D passive Drain. Rated for 60V VDSS and 4.1A continuous drain current at TA=+25°C (VGS=10V). Also connected to the internal tab of the SOT89 package.
3 S passive Source. Common terminal for load current and the body-diode anode; body diode is rated IS = 2.5A continuous with VSD ~0.75V typical.
4 D passive Drain tab (SOT89 large center pad). Electrically identical to pin 2 (Drain); also serves as the primary thermal path to the PCB copper.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-89
Category Transistors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • DMN6070SY-13

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V ID = 250μA, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 60V, VGS = 0V 2
Gate-Source Leakage IGSS 100 nA VGS = 16V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 1 3 V ID = 250μA, VDS = VGS 2
Static Drain-Source On-Resistance RDS(ON) 70 85 mΩ VGS = 10V, ID = 2.5A 2
Static Drain-Source On-Resistance RDS(ON) 76 110 mΩ VGS = 4.5V, ID = 1.5A 2
Diode Forward Voltage VSD 0.75 1.2 V IS = 12A, VGS = 0V 2
Drain-Source Voltage VDSS 60 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 4.1 A VGS = 10V, Steady State, TA = +25°C (Note 6) 2
Continuous Drain Current ID 3.3 A VGS = 10V, Steady State, TA = +70°C (Note 6) 2
Pulsed Drain Current IDM 15 A 10μs Pulse, Duty Cycle ≦ 1% 2
Maximum Body Diode Continuous Current IS 2.5 A Note 6 2
Pulsed Body Diode Current ISM 15 A 10μs Pulse, Duty Cycle ≦ 1% 2
Avalanche Current IAS 11 A L = 0.1mH (Note 7) 2
Avalanche Energy EAS 6 mJ L = 0.1mH (Note 7) 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Total Power Dissipation PD 0.9 W TA = +25°C (Note 5) 2
Total Power Dissipation PD 2.1 W TA = +25°C (Note 6) 2
Thermal Resistance, Junction to Ambient RθJA 122 °C/W Steady State (Note 5) 2
Thermal Resistance, Junction to Ambient RθJA 72 °C/W t < 10s (Note 5) 2
Thermal Resistance, Junction to Ambient RθJA 58 °C/W Steady State (Note 6) 2
Thermal Resistance, Junction to Ambient RθJA 34 °C/W t < 10s (Note 6) 2
Thermal Resistance, Junction to Case RθJC 12 °C/W Note 6 2

CAD (KiCad official)

  • Symbol: DMN6070SY-13
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: dmn6070sy-13-etched.step / dmn6070sy-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn6070sy-13.step / dmn6070sy-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 6001303368703e96, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF