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DMN6068LK3Q-13

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Diodes Incorporated MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMN6068LK3Q-13

Diodes Incorporated · MOSFETs · TO-252

DMN6068LK3Q-13 from Diodes Incorporated, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drives the 60V N-channel MOSFET, with VGS(TH) of 1.0V to 3.0V at ID = 250µA and a maximum VGS of 20V (±16V for AEC-Q101).
2 D passive Drain, the center lead, which is also connected to the exposed drain tab; VDSS is 60V and continuous ID is 8.5A at VGS = 10V.
3 S passive Source; the body diode continuous source current IS is 10.2A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V ID = 250µA, VGS = 0V 4
Zero Gate Voltage Drain Current IDSS 0.5 µA VDS = 60V, VGS = 0V 4
Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V 4
Gate Threshold Voltage VGS(TH) 1 3 V ID = 250µA, VDS = VGS 4
Static Drain-Source On-Resistance RDS(ON) 0.068 Ω VGS = 10V, ID = 12A 4
Static Drain-Source On-Resistance RDS(ON) 0.1 Ω VGS = 4.5V, ID = 6A 4
Diode Forward Voltage VSD 0.98 1.15 V IS = 12A, VGS = 0V 4
Drain-Source Voltage VDSS 60 V TA = +25°C 2
Gate-Source Voltage VGS 20 V TA = +25°C; Note 5: AEC-Q101 VGS maximum is ±16V 2
Single Pulsed Avalanche Energy EAS 37.5 mJ L = 3.0mH, IAS = 5.0A, RG = 25Ω, VDD = 50V, starting TJ = +25°C 2
Single Pulsed Avalanche Current IAS 5 A L = 3.0mH, RG = 25Ω, VDD = 50V, starting TJ = +25°C 2
Continuous Drain Current ID 8.5 A VGS = 10V, Note 7 2
Continuous Drain Current ID 6.8 A VGS = 10V, TA = +70°C, Note 7 2
Continuous Drain Current ID 6 A VGS = 10V, Note 6 2
Continuous Drain Current ID 20 A VGS = 10V, TC = +25°C, Note 12 2
Pulsed Drain Current IDM 22.2 A VGS = 10V, Note 8 2
Continuous Source Current (Body Diode) IS 10.2 A Note 7 2
Pulsed Source Current (Body Diode) ISM 22.2 A Note 8 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Power Dissipation PD 4.12 W Note 6 2
Power Dissipation PD 8.49 W Note 7 2
Power Dissipation PD 2.12 W Note 9 2
Power Dissipation PD 41 W TC = +25°C, Note 12 2
Thermal Resistance, Junction to Ambient RθJA 30.3 °C/W Note 6 2
Thermal Resistance, Junction to Ambient RθJA 14.7 °C/W Note 7 2
Thermal Resistance, Junction to Ambient RθJA 59 °C/W Note 9 2
Thermal Resistance, Junction to Lead RθJL 3.09 °C/W Note 10 2
Thermal Resistance, Junction to Case RθJC 3.03 °C/W Note 12 2
Forward Transconductance gfs 19.7 S VDS = 15V, ID = 12A 4
Reverse recovery time tRR 145 ns IS = 12A, di/dt = 100A/µs 4
Reverse recovery charge QRR 929 nC IS = 12A, di/dt = 100A/µs 4
Input Capacitance Ciss 502 pF VDS = 30V, VGS = 0V, f = 1MHz 4
Output Capacitance Coss 45.7 pF VDS = 30V, VGS = 0V, f = 1MHz 4
Reverse Transfer Capacitance Crss 27.1 pF VDS = 30V, VGS = 0V, f = 1MHz 4
Total Gate Charge Qg 5.55 nC VGS = 4.5V, VDS = 30V, ID = 12A 4
Total Gate Charge Qg 10.3 nC VGS = 10V, VDS = 30V, ID = 12A 4
Gate-Source Charge Qgs 1.6 nC VGS = 10V, VDS = 30V, ID = 12A 4
Gate-Drain Charge Qgd 3.5 nC VGS = 10V, VDS = 30V, ID = 12A 4
Turn-On Delay Time tD(ON) 3.6 ns VDD = 30V, VGS = 10V, ID = 12A, RG ≈ 6.0Ω 4
Turn-On Rise Time tR 10.8 ns VDD = 30V, VGS = 10V, ID = 12A, RG ≈ 6.0Ω 4
Turn-Off Delay Time tD(OFF) 11.9 ns VDD = 30V, VGS = 10V, ID = 12A, RG ≈ 6.0Ω 4
Turn-Off Fall Time tF 8.7 ns VDD = 30V, VGS = 10V, ID = 12A, RG ≈ 6.0Ω 4

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin • Terminals Connections: See Diagram • Terminals: Matte Tin Finish Annealed over Copper Leadframe. 1

CAD (KiCad official)

  • Symbol: DMN6068LK3Q-13
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: dmn6068lk3q-13-etched.step / dmn6068lk3q-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn6068lk3q-13.step / dmn6068lk3q-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (9 pp, sha256 e648d6ad573269ac, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF