component
DMN6066SSS-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| dmn6066sss-13-etched.glb | 16d ago |
| dmn6066sss-13-etched.step | 16d ago |
| dmn6066sss-13-hero.glb | 16d ago |
| dmn6066sss-13-hero.overlay.json | 16d ago |
| dmn6066sss-13.glb | 16d ago |
| dmn6066sss-13.kicad_mod | 16d ago |
| dmn6066sss-13.kicad_sym | 16d ago |
| dmn6066sss-13.lbr | 16d ago |
| dmn6066sss-13.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
DMN6066SSS-13
Diodes Incorporated · MOSFETs · SO-8
DMN6066SSS-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, one of three parallel source pins (1, 2, 3). |
| 2 | S | passive | Source terminal of the N-channel MOSFET, one of three parallel source pins (1, 2, 3). |
| 3 | S | passive | Source terminal of the N-channel MOSFET, one of three parallel source pins (1, 2, 3). |
| 4 | G | input | Gate terminal; VGS maximum is ±20V (±16V for AEC-Q101), with threshold 1.0V to 3.0V at 250µA. |
| 5 | D | passive | Drain terminal, one of four parallel drain pins (5-8); VDSS 60V, continuous ID 5.0A. |
| 6 | D | passive | Drain terminal, one of four parallel drain pins (5-8); VDSS 60V, continuous ID 5.0A. |
| 7 | D | passive | Drain terminal, one of four parallel drain pins (5-8); VDSS 60V, continuous ID 5.0A. |
| 8 | D | passive | Drain terminal, one of four parallel drain pins (5-8); VDSS 60V, continuous ID 5.0A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | ID = 250µA, VGS = 0V | 4 | ||
| Zero Gate Voltage Drain Current | IDSS | 0.5 | µA | VDS = 60V, VGS = 0V | 4 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 4 | |
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | ID = 250µA, VDS = VGS | 4 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.048 | 0.066 | Ω | VGS = 10V, ID = 4.5A | 4 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.068 | 0.097 | Ω | VGS = 4.5V, ID = 3.5A | 4 | |
| Diode Forward Voltage | VSD | 0.89 | 1.15 | V | IS = 4.5A, VGS = 0V | 4 | |
| Drain-Source Voltage | VDSS | 60 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | Commercial part (AEC-Q101 automotive limit of ±16V not applied) | 2 | |
| Single Pulsed Avalanche Energy | EAS | 37.5 | mJ | Note 11: L = 3.0mH, IAS = 5.0A, RG = 25Ω, VDD = 50V, starting TJ = +25°C | 2 | ||
| Single Pulsed Avalanche Current | IAS | 5 | A | Note 11: L = 3.0mH, RG = 25Ω, VDD = 50V, starting TJ = +25°C | 2 | ||
| Continuous Drain Current | ID | 5 | A | VGS = 10V (Note 8) | 2 | ||
| Continuous Drain Current | ID | 4 | A | VGS = 10V, TA = +70°C (Note 8) | 2 | ||
| Continuous Drain Current | ID | 3.7 | A | VGS = 10V, TA = +70°C (Note 7) | 2 | ||
| Pulsed Drain Current | IDM | 23 | A | VGS = 10V (Note 9) | 2 | ||
| Continuous Source Current (Body diode) | IS | 4 | A | Note 8 | 2 | ||
| Pulsed Source Current (Body diode) | ISM | 23 | A | Note 9 | 2 | ||
| Power Dissipation | PD | 1.56 | W | Note 7 | 2 | ||
| Power Dissipation | PD | 2.81 | W | Note 8 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 80 | °C/W | Note 7 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 44.5 | °C/W | Note 8 | 2 | ||
| Thermal Resistance, Junction to Lead | RθJL | 37 | °C/W | Note 10 | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | • Terminals Connections: See Diagram Below • Terminals: Finish, Tin Finish Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMN6066SSS-13 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
dmn6066sss-13-etched.step/dmn6066sss-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn6066sss-13.step/dmn6066sss-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (9 pp, sha256
7629459e2a1ab42a, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).