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DMN6040SVT-7

Public Made by Adom

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Diodes Incorporated MOSFETs, TSOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMN6040SVT-7

Diodes Incorporated · MOSFETs · TSOT-26

DMN6040SVT-7 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal, internally common with pins 2, 5 and 6; the device is rated for VDSS of 60V.
2 D passive Drain terminal, internally common with pins 1, 5 and 6; continuous drain current is 5.0A at VGS = 10V, TA = 25°C.
3 G input Gate terminal with a gate-source voltage rating of ±20V and a threshold voltage of 1V to 3V.
4 S passive Source terminal, connected to the body diode, which has a maximum forward current of 2.1A.
5 D passive Drain terminal, internally common with pins 1, 2 and 6; pulsed drain current is 30A.
6 D passive Drain terminal, internally common with pins 1, 2 and 5; RDS(on) is 44mΩ max at VGS = 10V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TSOT-26
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V TA = 25°C 2
Gate-Source Voltage VGSS -20 20 V TA = 25°C 2
Continuous Drain Current, steady state ID 5 A VGS = 10V, TA = 25°C, Note 5 2
Continuous Drain Current, steady state ID 4 A VGS = 10V, TA = 70°C, Note 5 2
Continuous Drain Current, t<10s ID 6.3 A VGS = 10V, TA = 25°C, Note 5 2
Continuous Drain Current, t<10s ID 5 A VGS = 10V, TA = 70°C, Note 5 2
Continuous Drain Current, steady state ID 4.3 A VGS = 5V, TA = 25°C, Note 5 2
Continuous Drain Current, steady state ID 3.4 A VGS = 5V, TA = 70°C, Note 5 2
Continuous Drain Current, t<10s ID 5.4 A VGS = 5V, TA = 25°C, Note 5 2
Continuous Drain Current, t<10s ID 4.3 A VGS = 5V, TA = 70°C, Note 5 2
Maximum Body Diode Forward Current IS 2.1 A Note 5 2
Pulsed Drain Current IDM 30 A 10μs pulse, duty cycle = 1% 2
Avalanche Current IAR 14.2 A L = 0.1mH, Note 6 2
Avalanche Energy EAR 10 mJ L = 0.1mH, Note 6 2
Total Power Dissipation PD 1.2 W TA = 25°C, Note 4 2
Total Power Dissipation PD 0.75 W TA = 70°C, Note 4 2
Thermal Resistance, Junction to Ambient, steady state RθJA 106 °C/W Steady state, Note 4 2
Thermal Resistance, Junction to Ambient, t<10s RθJA 69 °C/W t<10s, Note 4 2
Total Power Dissipation PD 1.8 W TA = 25°C, Note 5 2
Total Power Dissipation PD 1.1 W TA = 70°C, Note 5 2
Thermal Resistance, Junction to Ambient, steady state RθJA 68 °C/W Steady state, Note 5 2
Thermal Resistance, Junction to Ambient, t<10s RθJA 44 °C/W t<10s, Note 5 2
Thermal Resistance, Junction to Case RθJC 20 °C/W Note 5 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250μA 3
Zero Gate Voltage Drain Current IDSS 100 nA VDS = 60V, VGS = 0V 3
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V, VDS = 0V 3
Gate Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250μA 3
Static Drain-Source On-Resistance RDS(ON) 30 44 mΩ VGS = 10V, ID = 4.3A 3
Static Drain-Source On-Resistance RDS(ON) 35 60 mΩ VGS = 4.5V, ID = 4A 3
Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 1A 3
Forward Transfer Admittance /Yfs/ 4.5 S VDS = 10V, ID = 4.3A 3
Input Capacitance Ciss 1287 pF VDS = 25V, VGS = 0V, f = 1.0MHz 3
Output Capacitance Coss 57 pF VDS = 25V, VGS = 0V, f = 1.0MHz 3
Reverse Transfer Capacitance Crss 44 pF VDS = 25V, VGS = 0V, f = 1.0MHz 3
Gate Resistance RG 1.2 Ω VDS = 0V, VGS = 0V, f = 1.0MHz 3
Total Gate Charge (VGS = 10V) Qg 22.4 nC VDS = 30V, ID = 4.3A 3
Total Gate Charge (VGS = 4.5V) Qg 10.4 nC VDS = 30V, ID = 4.3A 3
Gate-Source Charge Qgs 4.9 nC VDS = 30V, ID = 4.3A 3
Gate-Drain Charge Qgd 3 nC VDS = 30V, ID = 4.3A 3
Turn-On Delay Time tD(on) 6.6 nS VGS = 10V, VDD = 30V, RG = 6Ω, ID = 4.3A 3
Turn-On Rise Time tr 8.1 nS VGS = 10V, VDD = 30V, RG = 6Ω, ID = 4.3A 3
Turn-Off Delay Time tD(off) 20.1 nS VGS = 10V, VDD = 30V, RG = 6Ω, ID = 4.3A 3
Turn-Off Fall Time tf 4 nS VGS = 10V, VDD = 30V, RG = 6Ω, ID = 4.3A 3
Body Diode Reverse Recovery Time trr 18 nS IS = 4.3A, dI/dt = 100A/μs 3
Body Diode Reverse Recovery Charge Qrr 11.9 nC IS = 4.3A, dI/dt = 100A/μs 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC Body Diode Reverse Recovery Charge Qrr ⎯ 11.9 ⎯ nC IS = 4.3A, dI/dt = 100A/μs Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 3
contacts Copper tin • Terminal Connections: See Diagram • Terminals: Finish, Tin Finish annealed over Copper leadframe. 1

CAD (KiCad official)

  • Symbol: DMN6040SVT-7
  • Footprint: Package_TO_SOT_SMD:TSOT-23-6
  • 3D model: TSOT-26 (KiCad packages3D, STEP)
  • 3D model files: dmn6040svt-7-etched.step / dmn6040svt-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn6040svt-7.step / dmn6040svt-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 e2b418f9fcd72d98, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF