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DMN6040SSD-HXY

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HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMN6040SSD-HXY

HXY MOSFET · MOSFETs · SOP-8

DMN6040SSD-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of N-channel MOSFET 1; the datasheet gives no pin-specific limit, so the device ratings apply (VDS 60 V, VGS ±20 V, ID 6.5 A at TA=25°C).
2 G1 input Gate of N-channel MOSFET 1; gate-source voltage is rated at ±20 V (VGS), and the device is specified for gate drive down to 2.5 V.
3 S2 passive Source terminal of N-channel MOSFET 2; the datasheet gives no pin-specific limit, so the device ratings apply (VDS 60 V, VGS ±20 V, ID 6.5 A at TA=25°C).
4 G2 input Gate of N-channel MOSFET 2; gate-source voltage is rated at ±20 V (VGS), and the device is specified for gate drive down to 2.5 V.
5 D2 passive Drain terminal of N-channel MOSFET 2; drain-source voltage is rated at 60 V (VDS) and RDS(ON) is below 48 mΩ at VGS=4.5 V.
6 D2 passive Drain terminal of N-channel MOSFET 2 (internally tied to pin 5); drain-source voltage is rated at 60 V (VDS) and RDS(ON) is below 48 mΩ at VGS=4.5 V.
7 D1 passive Drain terminal of N-channel MOSFET 1 (internally tied to pin 8); drain-source voltage is rated at 60 V (VDS) and RDS(ON) is below 36 mΩ at VGS=10 V.
8 D1 passive Drain terminal of N-channel MOSFET 1; drain-source voltage is rated at 60 V (VDS) and RDS(ON) is below 36 mΩ at VGS=10 V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 69 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.4 2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 32 36 mΩ VGS=10V, ID=6A 2
Drain-Source On-State Resistance RDS(ON) 34 48 mΩ VGS=4.5V, ID=4A 2
Forward Transconductance gFS 20 S VDS=5V,ID=6A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=6A 2
Diode Forward Current IS 7 A 2
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current ID@TA=25℃ 6.5 A TA=25℃, VGS @ 4.5V 1
Drain Current ID@TA=70℃ 5 A TA=70℃, VGS @ 4.5V 1
Pulsed Drain Current IDM 30 A Pulsed, repetitive rating (note 1) 1
Total Power Dissipation PD@TA=25℃ 2.1 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 60 ℃/W 1

CAD (KiCad official)

  • Symbol: DMN6040SSD-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: dmn6040ssd-hxy-etched.step / dmn6040ssd-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn6040ssd-hxy.step / dmn6040ssd-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 8933337e815926bf, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF