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DMN6040SK3-13

Public Made by Adom

by adom

Diodes Incorporated MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMN6040SK3-13

Diodes Incorporated · MOSFETs · TO-252

DMN6040SK3-13 from Diodes Incorporated, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the gate-source voltage is rated at ±20V, with a gate threshold of 1V to 3V.
2 D passive Drain, centre lead, which is connected to the exposed drain tab; drain-source voltage is rated at 60V and continuous drain current is 20A at TC = +25°C.
3 S passive Source; the maximum body diode forward current is 4A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250µA 2
Static Drain-Source On-Resistance RDS(ON) 30 40 mΩ VGS = 10V, ID = 20A 2
Static Drain-Source On-Resistance RDS(ON) 35 50 mΩ VGS = 4.5V, ID = 12A 2
Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 1A 2
Drain-Source Voltage VDSS 60 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 20 A Steady state, TC = +25°C 2
Continuous Drain Current ID 13 A Steady state, TC = +100°C 2
Maximum Body Diode Forward Current IS 4 A 2
Pulsed Drain Current IDM 30 A 10µs pulse, duty cycle = 1% 2
Avalanche Current IAR 14.2 A 2
Avalanche Energy EAR 10 mJ 2
Total Power Dissipation PD 42 W TC = +25°C 2
Total Power Dissipation PD 17 W TC = +100°C 2
Thermal Resistance, Junction to Ambient RθJA 44 °C/W 2
Thermal Resistance, Junction to Case RθJC 3 °C/W 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC Body Diode Reverse Recovery Charge Qrr ⎯ 11.9 ⎯ nC IS = 4.3A, dI/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 2
contacts Copper tin • Terminal Connections: See Diagram • Terminals: Finish, Matte Tin Finish annealed over Copper 1

CAD (KiCad official)

  • Symbol: DMN6040SK3-13
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: dmn6040sk3-13-etched.step / dmn6040sk3-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn6040sk3-13.step / dmn6040sk3-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 5f0955a236e8b7a2, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF