component
DMN601WKQ
Public Made by Adomby adom
Leiditech MOSFETs, SOT-323-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DMN601WKQ
Leiditech · MOSFETs · SOT-323-3
DMN601WKQ from Leiditech, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, limited to ±20 Vdc continuous and ±40 Vdc non-repetitive (tp≤50µs), with a gate threshold voltage of 1.0 to 2.5 Vdc at ID = 250 µAdc. |
| 2 | Source | passive | Source terminal of the MOSFET, which carries up to 115 mAdc continuous source (body diode) current and 800 mAdc pulsed. |
| 3 | Drain | passive | Drain terminal of the MOSFET, rated for 60 Vdc drain-source voltage and ±115 mAdc continuous drain current at TC = 25°C (±800 mAdc pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Leiditech |
| Package | SOT-323-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | Vdc | 1 | |||
| Drain-Gate Voltage | VDGR | 60 | Vdc | RGS = 1.0 MΩ | 1 | ||
| Drain Current Continuous | ID | -115 | 115 | mAdc | TC = 25°C | 1 | |
| Drain Current Continuous | ID | -75 | 75 | mAdc | TC = 100°C | 1 | |
| Drain Current Pulsed | IDM | -800 | 800 | mAdc | Pulsed (Note 1) | 1 | |
| Gate-Source Voltage Continuous | VGS | -20 | 20 | Vdc | Continuous | 1 | |
| Gate-Source Voltage Non-repetitive | VGSM | -40 | 40 | Vdc | tp≤50μs | 1 | |
| Total Device Dissipation | PD | 225 | mW | FR-5 Board (Note 2) @ TA = 25ºC | 1 | ||
| Derate above 25ºC | PD | 1.8 | mW/ºC | FR-5 Board (Note 2) | 1 | ||
| Thermal Resistance Junction-to-Ambient | RΘJA | 556 | ºC/W | Note 2 | 1 | ||
| Junction and Storage Temperature | TJ,Tstg | -55 | 150 | ºC | 1 | ||
| Drain-Source Breakdown Voltage | VBRDSS | 60 | Vdc | VGS = 0, ID = 10μAdc | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μAdc | VGS = 0, VDS = 60 Vdc, TJ = 25°C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 500 | μAdc | VGS = 0, VDS = 60 Vdc, TJ = 125°C | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 1 | μAdc | VGS = 20 Vdc | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -1 | μAdc | VGS = -20 Vdc | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | Vdc | VDS = VGS, ID = 250μAdc | 2 |
| On-State Drain Current | ID(on) | 500 | mA | VDS ≥ 2.0 VDS(on), VGS = 10 Vdc | 2 | ||
| Static Drain-Source On-State Voltage | VDS(on) | 3.75 | Vdc | VGS = 10 Vdc, ID = 500 mAdc | 2 | ||
| Static Drain-Source On-State Voltage | VDS(on) | 0.375 | Vdc | VGS = 5.0 Vdc, ID = 50 mAdc | 2 | ||
| Static Drain-Source On-State Resistance | RDS(on) | 1.4 | 7.5 | Ohms | VGS = 10 Vdc, ID = 500 mAdc, TC = 25°C | 2 | |
| Static Drain-Source On-State Resistance | RDS(on) | 13.5 | Ohms | VGS = 10 Vdc, ID = 500 mAdc, TC = 125°C | 2 | ||
| Static Drain-Source On-State Resistance | RDS(on) | 1.8 | 7.5 | Ohms | VGS = 5.0 Vdc, ID = 50 mAdc, TC = 25°C | 2 | |
| Forward Transconductance | gfs | 80 | mmhos | VDS ≥ 2.0 VDS(on), ID = 200 mAdc | 2 | ||
| Input Capacitance | Cibo | 17 | 50 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 | |
| Output Capacitance | Cobo | 10 | 25 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 2.5 | 5 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 | |
| Turn-On Delay Time | td(on) | 7 | 20 | ns | VDD = 25 Vdc, ID = 500 mAdc, RG = 25Ω, RL = 50Ω, Vgen = 10 V | 2 | |
| Turn-Off Delay Time | td(off) | 11 | 40 | ns | VDD = 25 Vdc, ID = 500 mAdc, RG = 25Ω, RL = 50Ω, Vgen = 10 V | 2 | |
| Diode Forward On-Voltage | VSD | -1.5 | Vdc | IS = 115 mAdc, VGS = 0 V | 2 | ||
| Source Current Continuous (Body Diode) | IS | -115 | mAdc | 2 | |||
| Source Current Pulsed | ISM | -800 | mAdc | 2 |
CAD (KiCad official)
- Symbol:
DMN601WKQ - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323-3 (KiCad packages3D, STEP)
- 3D model files:
dmn601wkq-etched.step/dmn601wkq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn601wkq.step/dmn601wkq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Leiditech datasheet (6 pp, sha256
25119008293b1800, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMN601WKQ
**Leiditech** · MOSFETs · SOT-323-3
DMN601WKQ from Leiditech, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, limited to ±20 Vdc continuous and ±40 Vdc non-repetitive (tp≤50µs), with a gate threshold voltage of 1.0 to 2.5 Vdc at ID = 250 µAdc. |
| 2 | Source | passive | Source terminal of the MOSFET, which carries up to 115 mAdc continuous source (body diode) current and 800 mAdc pulsed. |
| 3 | Drain | passive | Drain terminal of the MOSFET, rated for 60 Vdc drain-source voltage and ±115 mAdc continuous drain current at TC = 25°C (±800 mAdc pulsed). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Leiditech |
| Package | SOT-323-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 60 | Vdc | | 1 |
| Drain-Gate Voltage | VDGR | | | 60 | Vdc | RGS = 1.0 MΩ | 1 |
| Drain Current Continuous | ID | -115 | | 115 | mAdc | TC = 25°C | 1 |
| Drain Current Continuous | ID | -75 | | 75 | mAdc | TC = 100°C | 1 |
| Drain Current Pulsed | IDM | -800 | | 800 | mAdc | Pulsed (Note 1) | 1 |
| Gate-Source Voltage Continuous | VGS | -20 | | 20 | Vdc | Continuous | 1 |
| Gate-Source Voltage Non-repetitive | VGSM | -40 | | 40 | Vdc | tp≤50μs | 1 |
| Total Device Dissipation | PD | | | 225 | mW | FR-5 Board (Note 2) @ TA = 25ºC | 1 |
| Derate above 25ºC | PD | | | 1.8 | mW/ºC | FR-5 Board (Note 2) | 1 |
| Thermal Resistance Junction-to-Ambient | RΘJA | | | 556 | ºC/W | Note 2 | 1 |
| Junction and Storage Temperature | TJ,Tstg | -55 | | 150 | ºC | | 1 |
| Drain-Source Breakdown Voltage | VBRDSS | 60 | | | Vdc | VGS = 0, ID = 10μAdc | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μAdc | VGS = 0, VDS = 60 Vdc, TJ = 25°C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 500 | μAdc | VGS = 0, VDS = 60 Vdc, TJ = 125°C | 2 |
| Gate-Body Leakage Current, Forward | IGSSF | | | 1 | μAdc | VGS = 20 Vdc | 2 |
| Gate-Body Leakage Current, Reverse | IGSSR | | | -1 | μAdc | VGS = -20 Vdc | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | Vdc | VDS = VGS, ID = 250μAdc | 2 |
| On-State Drain Current | ID(on) | 500 | | | mA | VDS ≥ 2.0 VDS(on), VGS = 10 Vdc | 2 |
| Static Drain-Source On-State Voltage | VDS(on) | | | 3.75 | Vdc | VGS = 10 Vdc, ID = 500 mAdc | 2 |
| Static Drain-Source On-State Voltage | VDS(on) | | | 0.375 | Vdc | VGS = 5.0 Vdc, ID = 50 mAdc | 2 |
| Static Drain-Source On-State Resistance | RDS(on) | | 1.4 | 7.5 | Ohms | VGS = 10 Vdc, ID = 500 mAdc, TC = 25°C | 2 |
| Static Drain-Source On-State Resistance | RDS(on) | | | 13.5 | Ohms | VGS = 10 Vdc, ID = 500 mAdc, TC = 125°C | 2 |
| Static Drain-Source On-State Resistance | RDS(on) | | 1.8 | 7.5 | Ohms | VGS = 5.0 Vdc, ID = 50 mAdc, TC = 25°C | 2 |
| Forward Transconductance | gfs | 80 | | | mmhos | VDS ≥ 2.0 VDS(on), ID = 200 mAdc | 2 |
| Input Capacitance | Cibo | | 17 | 50 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 |
| Output Capacitance | Cobo | | 10 | 25 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 2.5 | 5 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 |
| Turn-On Delay Time | td(on) | | 7 | 20 | ns | VDD = 25 Vdc, ID = 500 mAdc, RG = 25Ω, RL = 50Ω, Vgen = 10 V | 2 |
| Turn-Off Delay Time | td(off) | | 11 | 40 | ns | VDD = 25 Vdc, ID = 500 mAdc, RG = 25Ω, RL = 50Ω, Vgen = 10 V | 2 |
| Diode Forward On-Voltage | VSD | | | -1.5 | Vdc | IS = 115 mAdc, VGS = 0 V | 2 |
| Source Current Continuous (Body Diode) | IS | | | -115 | mAdc | | 2 |
| Source Current Pulsed | ISM | | | -800 | mAdc | | 2 |
## CAD (KiCad official)
- Symbol: `DMN601WKQ`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323-3 (KiCad packages3D, STEP)
- 3D model files: `dmn601wkq-etched.step` / `dmn601wkq-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn601wkq.step` / `dmn601wkq.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Leiditech datasheet](docs/dmn601wkq-datasheet.pdf) (6 pp, sha256 `25119008293b1800`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmn601wkq-datasheet.pdf)