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DMN5L06VAK-7

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Diodes Incorporated MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMN5L06VAK-7

Diodes Incorporated · MOSFETs · SOT-563

DMN5L06VAK-7 from Diodes Incorporated, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of MOSFET 1; ESD protected up to 2kV, gate-source voltage ±20V continuous, threshold 1.0V max.
2 S1 passive Source of MOSFET 1; drain current up to 280mA continuous for the device.
3 D2 passive Drain of MOSFET 2; drain-source voltage 50V max, 280mA continuous, 1.5A pulsed.
4 G2 input Gate of MOSFET 2; ESD protected up to 2kV, gate-source voltage ±20V continuous, threshold 1.0V max.
5 S2 passive Source of MOSFET 2; drain current up to 280mA continuous for the device.
6 D1 passive Drain of MOSFET 1; drain-source voltage 50V max, 280mA continuous, 1.5A pulsed.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-563
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain Source Voltage VDSS 50 V TA = +25°C 3
Drain-Gate Voltage VDGR 50 V RGS ≤ 1.0MΩ 3
Gate-Source Voltage Continuous VGSS 20 V Continuous, TA = +25°C 3
Gate-Source Voltage Pulsed VGSS 40 V Pulsed, TA = +25°C 3
Drain Current Continuous ID 280 mA Note 7 3
Drain Current Pulsed IDM 1.5 A Note 7 3
Total Power Dissipation PD 250 mW Note 7 3
Thermal Resistance, Junction to Ambient RθJA 500 C/W Note 7 3
Operating and Storage Temperature Range TJ, TSTG -55 150 C 3
Drain-Source Breakdown Voltage BVDSS 50 V VGS = 0V, ID = 10µA 3
Zero Gate Voltage Drain Current IDSS 60 nA VDS = 50V, VGS = 0V 3
Gate-Body Leakage IGSS 1 µA VGS = ±12V, VDS = 0V 3
Gate-Body Leakage IGSS 500 nA VGS = ±10V, VDS = 0V 3
Gate-Body Leakage IGSS 50 nA VGS = ±5V, VDS = 0V 3
Gate Threshold Voltage VGS(TH) 0.49 1 V @TJ = +25°C, VDS = VGS, ID = 250µA 3
Gate Threshold Voltage VGS(TH) 0.3 1.2 V @TJ = +0°C to +85°C (Note 9), VDS = VGS, ID = 250µA 3
Static Drain-Source On-Resistance RDS(ON) 3 Ω VGS = 1.8V, ID = 50mA 3
Static Drain-Source On-Resistance RDS(ON) 2.5 Ω VGS = 2.5V, ID = 50mA 3
Static Drain-Source On-Resistance RDS(ON) 2 Ω VGS = 5.0V, ID = 50mA 3
On-State Drain Current ID(ON) 0.5 1.4 A VGS = 10V, VDS = 7.5V 3
Forward Transconductance /Yfs/ 200 mS VDS =10V, ID = 0.2A 3
Source-Drain Diode Forward Voltage VSD 0.5 1.4 V VGS = 0V, IS = 115mA 3
Input Capacitance Ciss 50 pF VDS = 25V, VGS = 0V, f = 1.0MHz 3
Output Capacitance Coss 25 pF VDS = 25V, VGS = 0V, f = 1.0MHz 3
Reverse Transfer Capacitance Crss 5 pF VDS = 25V, VGS = 0V, f = 1.0MHz 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminal Connections: See Diagram  Terminals: Finish, Matte Tin Annealed over Copper Leadframe. 1

CAD (KiCad official)

  • Symbol: DMN5L06VAK-7
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: dmn5l06vak-7-etched.step / dmn5l06vak-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn5l06vak-7.step / dmn5l06vak-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 69cdc038386ed3bf, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF