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DMN55D0UT-7
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Diodes Incorporated MOSFETs, SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DMN55D0UT-7
Diodes Incorporated · MOSFETs · SOT-523
DMN55D0UT-7 from Diodes Incorporated, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, ESD protected to 2kV with an internal gate protection diode; absolute maximum VGSS ±12V and threshold VGS(TH) 0.7V min to 1.0V max at ID = 250µA. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with the body diode running to the drain (VSD 1.3V max at IS = 100mA). |
| 3 | D | passive | Drain terminal with VDSS of 50V and continuous drain current of 160mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-523 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 50 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | -12 | 12 | V | TA = +25°C | 2 | |
| Continuous Drain Current | ID | 160 | mA | TA = +25°C, Note 6 | 2 | ||
| Pulsed Drain Current | IDM | 560 | mA | TA = +25°C, Note 6 | 2 | ||
| Total Power Dissipation | PD | 200 | mW | Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 625 | °C/W | Note 6 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 50 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 50V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | 1 | µA | VGS = ±8V, VDS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | 5 | µA | VGS = ±12V, VDS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 0.7 | 0.8 | 1 | V | VDS = VGS, ID = 250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 3.1 | 4 | Ω | VGS = 4V, ID = 100mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 4 | 5 | Ω | VGS = 2.5V, ID = 80mA | 2 | |
| Forward Transconductance | gFS | 180 | mS | VDS = 10V, ID = 100mA, f = 1.0kHz | 2 | ||
| Diode Forward Voltage | VSD | 0.7 | 1.3 | V | VGS = 0V, IS = 100mA | 2 | |
| Input Capacitance | Ciss | 25 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 5 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 2.1 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 2 | ||
| Gate Resistance | RG | 500 | Ω | f = 1MHz, VGS = 0V, VDS = 0V | 2 | ||
| Total Gate Charge (VGS = 4V) | QG | 295 | pC | VDS = 10V, ID = 100mA | 2 | ||
| Total Gate Charge (VGS = 8V) | QG | 636 | pC | VDS = 10V, ID = 100mA | 2 | ||
| Gate-Source Charge | QGS | 72 | pC | VDS = 10V, ID = 100mA | 2 | ||
| Gate-Drain Charge | QGD | 18 | pC | VDS = 10V, ID = 100mA | 2 | ||
| Turn-On Delay Time | tD(ON) | 6 | ns | VDD = 10V, VGS = 4V, RG = 25Ω, ID = 100mA | 2 | ||
| Turn-On Rise Time | tR | 4.4 | ns | VDD = 10V, VGS = 4V, RG = 25Ω, ID = 100mA | 2 | ||
| Turn-Off Delay Time | tD(OFF) | 23.4 | ns | VDD = 10V, VGS = 4V, RG = 25Ω, ID = 100mA | 2 | ||
| Turn-Off Fall Time | tF | 11 | ns | VDD = 10V, VGS = 4V, RG = 25Ω, ID = 100mA | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
DMN55D0UT-7 - Footprint:
Package_TO_SOT_SMD:SOT-523 - 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
dmn55d0ut-7-etched.step/dmn55d0ut-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn55d0ut-7.step/dmn55d0ut-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
34970943647cfb0c, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMN55D0UT-7
**Diodes Incorporated** · MOSFETs · SOT-523
DMN55D0UT-7 from Diodes Incorporated, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, ESD protected to 2kV with an internal gate protection diode; absolute maximum VGSS ±12V and threshold VGS(TH) 0.7V min to 1.0V max at ID = 250µA. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with the body diode running to the drain (VSD 1.3V max at IS = 100mA). |
| 3 | D | passive | Drain terminal with VDSS of 50V and continuous drain current of 160mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-523 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 50 | V | TA = +25°C | 2 |
| Gate-Source Voltage | VGSS | -12 | | 12 | V | TA = +25°C | 2 |
| Continuous Drain Current | ID | | | 160 | mA | TA = +25°C, Note 6 | 2 |
| Pulsed Drain Current | IDM | | | 560 | mA | TA = +25°C, Note 6 | 2 |
| Total Power Dissipation | PD | | | 200 | mW | Note 6 | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | 625 | | °C/W | Note 6 | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 50 | | | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 50V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | | | 1 | µA | VGS = ±8V, VDS = 0V | 2 |
| Gate-Source Leakage | IGSS | | | 5 | µA | VGS = ±12V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 0.7 | 0.8 | 1 | V | VDS = VGS, ID = 250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 3.1 | 4 | Ω | VGS = 4V, ID = 100mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 4 | 5 | Ω | VGS = 2.5V, ID = 80mA | 2 |
| Forward Transconductance | gFS | 180 | | | mS | VDS = 10V, ID = 100mA, f = 1.0kHz | 2 |
| Diode Forward Voltage | VSD | | 0.7 | 1.3 | V | VGS = 0V, IS = 100mA | 2 |
| Input Capacitance | Ciss | | 25 | | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 5 | | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 2.1 | | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 2 |
| Gate Resistance | RG | | 500 | | Ω | f = 1MHz, VGS = 0V, VDS = 0V | 2 |
| Total Gate Charge (VGS = 4V) | QG | | 295 | | pC | VDS = 10V, ID = 100mA | 2 |
| Total Gate Charge (VGS = 8V) | QG | | 636 | | pC | VDS = 10V, ID = 100mA | 2 |
| Gate-Source Charge | QGS | | 72 | | pC | VDS = 10V, ID = 100mA | 2 |
| Gate-Drain Charge | QGD | | 18 | | pC | VDS = 10V, ID = 100mA | 2 |
| Turn-On Delay Time | tD(ON) | | 6 | | ns | VDD = 10V, VGS = 4V, RG = 25Ω, ID = 100mA | 2 |
| Turn-On Rise Time | tR | | 4.4 | | ns | VDD = 10V, VGS = 4V, RG = 25Ω, ID = 100mA | 2 |
| Turn-Off Delay Time | tD(OFF) | | 23.4 | | ns | VDD = 10V, VGS = 4V, RG = 25Ω, ID = 100mA | 2 |
| Turn-Off Fall Time | tF | | 11 | | ns | VDD = 10V, VGS = 4V, RG = 25Ω, ID = 100mA | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 | 1 |
## CAD (KiCad official)
- Symbol: `DMN55D0UT-7`
- Footprint: `Package_TO_SOT_SMD:SOT-523`
- 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `dmn55d0ut-7-etched.step` / `dmn55d0ut-7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn55d0ut-7.step` / `dmn55d0ut-7.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/DMN55D0UT-7.pdf) (6 pp, sha256 `34970943647cfb0c`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmn55d0ut-7-datasheet.pdf)