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DMN4026SK3-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMN4026SK3-HXY

HXY MOSFET · MOSFETs · TO-252-2L

DMN4026SK3-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated ±20V, threshold 1.0 to 2.5V, and the device operates with gate voltages as low as 4.5V.
2 D passive Drain (also the package tab); drain-source voltage is rated 40V with 30A continuous drain current at TC=25℃.
3 S passive Source; maximum continuous body-diode forward current is 30A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 40 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 18 22 mΩ VGS=10V, ID=8A 2
Static Drain-Source on-Resistance RDS(on) 25 35 mΩ VGS=4.5V, ID=5A 2
Maximum Continuous Drain to Source Diode Forward Current IS 30 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 40 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=8A 2
Drain-Source Voltage VDS 40 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID@TC=25℃ 30 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 15 A VGS @ 10V 1
Pulsed Drain Current IDM 40 A TC=25℃ 1
Single Pulse Avalanche Energy EAS 17.1 mJ TC=25℃ 1
Avalanche Current IAS 10 A TC=25℃ 1
Total Power Dissipation PD@TC=25℃ 4 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 2.8 ℃/W 1
Input Capacitance Ciss 633 pF VDS=20V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 67 pF VDS=20V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 58 pF VDS=20V, VGS=0V, f=1.0MHz 2
Total Gate Charge Qg 12 nC VDS=20V, ID=8A, VGS=10V 2
Gate-Source Charge Qgs 3.2 nC VDS=20V, ID=8A, VGS=10V 2
Gate-Drain Charge Qgd 3.1 nC VDS=20V, ID=8A, VGS=10V 2
Turn-on Delay Time td(on) 4 ns VDD=20V, RL=2.5Ω, VGS=10V, RREN=3Ω 2
Turn-on Rise Time tr 3 ns VDD=20V, RL=2.5Ω, VGS=10V, RREN=3Ω 2
Turn-off Delay Time td(off) 15 ns VDD=20V, RL=2.5Ω, VGS=10V, RREN=3Ω 2
Turn-off Fall Time tf 2 ns VDD=20V, RL=2.5Ω, VGS=10V, RREN=3Ω 2

CAD (KiCad official)

  • Symbol: DMN4026SK3-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: dmn4026sk3-hxy-etched.step / dmn4026sk3-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn4026sk3-hxy.step / dmn4026sk3-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 48414f3af4a5f53a, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF