component
DMN3730U-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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dmn3730u-7: specified limits as data (metadata.characteristics, 20 rows from the datasheet)
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DMN3730U-7
Diodes Incorporated · MOSFETs · SOT-23
DMN3730U-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, ESD protected to 2kV via an internal gate protection diode, with VGS(TH) of 0.45V to 0.95V at ID = 250μA and a maximum VGSS of ±8V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, connected to the body diode, with continuous drain current up to 0.94A at TA = +25°C. |
| 3 | D | passive | Drain terminal of the N-channel MOSFET, rated for a maximum drain-source voltage VDSS of 30V and pulsed drain current IDM of 10A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 10μA | 4 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 30V, VGS = 0V | 4 | ||
| Gate-Source Leakage | IGSS | 3 | μA | VGS = ±8V, VDS = 0V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 0.45 | 0.95 | V | VDS = VGS, ID = 250μA | 4 | |
| Static Drain-Source On-Resistance | RDS(ON) | 460 | mΩ | VGS = 4.5V, ID = 200mA | 4 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 560 | mΩ | VGS = 2.5V, ID = 100mA | 4 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 730 | mΩ | VGS = 1.8V, ID = 75mA | 4 | ||
| Forward Transfer Admittance | /Yfs/ | 40 | mS | VDS = 3V, ID = 10mA | 4 | ||
| Diode Forward Voltage | VSD | 0.7 | 1.2 | V | VGS = 0V, IS = 300mA | 4 | |
| Drain-Source Voltage | VDSS | 30 | V | 2 | |||
| Gate-Source Voltage | VGSS | -8 | 8 | V | 2 | ||
| Continuous Drain Current (steady state) | ID | 0.94 | A | TA = +25°C (Note 6) | 2 | ||
| Continuous Drain Current (steady state) | ID | 0.68 | A | TA = +85°C (Note 6) | 2 | ||
| Continuous Drain Current (steady state) | ID | 0.75 | A | TA = +25°C (Note 5) | 2 | ||
| Pulsed Drain Current | IDM | 10 | A | Note 7, 10μs pulse duty cycle = 1% | 2 | ||
| Power Dissipation | PD | 0.45 | W | Note 5 | 2 | ||
| Power Dissipation | PD | 0.71 | W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 275 | °C/W | Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 177 | °C/W | Note 6 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
DMN3730U-7 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
dmn3730u-7-etched.step/dmn3730u-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn3730u-7.step/dmn3730u-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
a8cdb447692a567e, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMN3730U-7
**Diodes Incorporated** · MOSFETs · SOT-23
DMN3730U-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, ESD protected to 2kV via an internal gate protection diode, with VGS(TH) of 0.45V to 0.95V at ID = 250μA and a maximum VGSS of ±8V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, connected to the body diode, with continuous drain current up to 0.94A at TA = +25°C. |
| 3 | D | passive | Drain terminal of the N-channel MOSFET, rated for a maximum drain-source voltage VDSS of 30V and pulsed drain current IDM of 10A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS = 0V, ID = 10μA | 4 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 30V, VGS = 0V | 4 |
| Gate-Source Leakage | IGSS | | | 3 | μA | VGS = ±8V, VDS = 0V | 4 |
| Gate Threshold Voltage | VGS(TH) | 0.45 | | 0.95 | V | VDS = VGS, ID = 250μA | 4 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 460 | mΩ | VGS = 4.5V, ID = 200mA | 4 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 560 | mΩ | VGS = 2.5V, ID = 100mA | 4 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 730 | mΩ | VGS = 1.8V, ID = 75mA | 4 |
| Forward Transfer Admittance | /Yfs/ | 40 | | | mS | VDS = 3V, ID = 10mA | 4 |
| Diode Forward Voltage | VSD | | 0.7 | 1.2 | V | VGS = 0V, IS = 300mA | 4 |
| Drain-Source Voltage | VDSS | | | 30 | V | | 2 |
| Gate-Source Voltage | VGSS | -8 | | 8 | V | | 2 |
| Continuous Drain Current (steady state) | ID | | | 0.94 | A | TA = +25°C (Note 6) | 2 |
| Continuous Drain Current (steady state) | ID | | | 0.68 | A | TA = +85°C (Note 6) | 2 |
| Continuous Drain Current (steady state) | ID | | | 0.75 | A | TA = +25°C (Note 5) | 2 |
| Pulsed Drain Current | IDM | | | 10 | A | Note 7, 10μs pulse duty cycle = 1% | 2 |
| Power Dissipation | PD | | | 0.45 | W | Note 5 | 2 |
| Power Dissipation | PD | | | 0.71 | W | Note 6 | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 275 | °C/W | Note 5 | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 177 | °C/W | Note 6 | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
## CAD (KiCad official)
- Symbol: `DMN3730U-7`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `dmn3730u-7-etched.step` / `dmn3730u-7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn3730u-7.step` / `dmn3730u-7.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885237577629696) (8 pp, sha256 `a8cdb447692a567e`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmn3730u-7-datasheet.pdf)