component
DMN3401LVQ-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-563. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
main
Ray
dmn3401lvq-13: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding)
2136e15
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"subcategory": "MOSFETs",
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"pins": [
{
"number": "1",
"name": "D2",
"type": "passive",
"description": "Drain of MOSFET 2. Handles up to 30V VDSS and continuous ID up to 0.8A @ VGS=4.5V (1.1A @ VGS=10V). Top-left pad on SOT-563 top view."
},
{
"number": "2",
"name": "G1",
"type": "input",
"description": "Gate of MOSFET 1. ESD-protected. VGS(TH) 0.8-1.6V, absolute max VGSS ±20V. Input capacitance Ciss ≈ 50pF, total gate charge Qg ≈ 1.2nC at VGS=10V."
},
{
"number": "3",
"name": "S1",
"type": "passive",
"description": "Source of MOSFET 1. Body-diode return path (max continuous body-diode forward current IS = 0.9A, VSD ≈ 0.7V typ). Reference for VGS on MOSFET 1."
},
{
"number": "4",
"name": "S2",
"type": "passive",
"description": "Source of MOSFET 2. Body-diode return path (max continuous body-diode forward current IS = 0.9A, VSD ≈ 0.7V typ). Reference for VGS on MOSFET 2."
},
{
"number": "5",
"name": "G2",
"type": "input",
"description": "Gate of MOSFET 2. ESD-protected. VGS(TH) 0.8-1.6V, absolute max VGSS ±20V. Input capacitance Ciss ≈ 50pF, total gate charge Qg ≈ 1.2nC at VGS=10V."
},
{
"number": "6",
"name": "D1",
"type": "passive",
"description": "Drain of MOSFET 1. Handles up to 30V VDSS and continuous ID up to 0.8A @ VGS=4.5V (1.1A @ VGS=10V). RDS(on) 0.16Ω typ @ VGS=10V."
}
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"source_tier": "lcsc"
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"cad": "KiCad official (CC-BY-SA 4.0)",
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"checked": "2026-10-07",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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"metadata": {
"specs": {
"Manufacturer": "Diodes Incorporated",
"Package": "SOT-563",
"Category": "Transistors/Thyristors",
"Pins": "6"
}
},
"variants": [
{
"mpn": "DMN3401LVQ-13-7",
"kind": "packaging"
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"updated_at": "2026-09-24T19:51:02.883Z"
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