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DMN33D9LV-7A

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Diodes Incorporated MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMN33D9LV-7A

Diodes Incorporated · MOSFETs · SOT-563

DMN33D9LV-7A from Diodes Incorporated, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D1 passive Drain of the first N-channel MOSFET, rated for 30V drain-source voltage (VDSS).
2 G2 input Gate of the second N-channel MOSFET, with ESD protection and gate-source voltage rated ±20V (VGSS).
3 S2 passive Source of the second N-channel MOSFET.
4 D2 passive Drain of the second N-channel MOSFET, rated for 30V drain-source voltage (VDSS).
5 G1 input Gate of the first N-channel MOSFET, with ESD protection and gate-source voltage rated ±20V (VGSS).
6 S1 passive Source of the first N-channel MOSFET.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-563
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 1mA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 30V, VGS = 0V 2
Gate-Source Leakage IGSS -10 10 μA VGS = ±16V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 0.8 1.4 V VDS = 3V, ID = 100μA 2
Static Drain-Source On-Resistance RDS(ON) 0.2 2.4 Ω VGS = 10V, ID = 250mA 2
Static Drain-Source On-Resistance RDS(ON) 0.3 3 Ω VGS = 4.5V, ID = 250mA 2
Static Drain-Source On-Resistance RDS(ON) 0.3 5 Ω VGS = 4.0V, ID = 10mA 2
Static Drain-Source On-Resistance RDS(ON) 0.7 7 Ω VGS = 2.5V, ID = 10mA 2
Diode Forward Voltage VSD 0.8 1.2 V VGS = 0V, IS = 115mA 2
Drain-Source Voltage VDSS 30 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current (steady state) ID 350 mA VGS = 4.5V, TA = +25°C 2
Continuous Drain Current (steady state) ID 200 mA VGS = 4.5V, TA = +70°C 2
Maximum Continuous Body Diode Forward Current IS 0.5 A 2
Pulsed Drain Current IDM 0.8 A 10µs Pulse, Duty Cycle = 1% 2
Total Power Dissipation PD 0.43 W TA = +25°C 2
Total Power Dissipation PD 0.2 W TA = +70°C 2
Thermal Resistance, Junction to Ambient RθJA 288 °C/W Steady State 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminal Connections: See Diagram  Terminals: Finish, Matte Tin Annealed over Copper Leadframe. 1

CAD (KiCad official)

  • Symbol: DMN33D9LV-7A
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: dmn33d9lv-7a-etched.step / dmn33d9lv-7a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn33d9lv-7a.step / dmn33d9lv-7a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 1c65d9c5ddb6fa16, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF