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DMN33D8LTQ-13
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Diodes Incorporated MOSFETs, SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DMN33D8LTQ-13
Diodes Incorporated · MOSFETs · SOT-523
DMN33D8LTQ-13 from Diodes Incorporated, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, ESD protected (2kV) with internal gate protection diode; VGSS maximum ±20V and threshold 0.8V to 1.5V at VDS = 3V, ID = 100µA. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; drain current is 115mA continuous (Note 5). |
| 3 | D | passive | Drain terminal of the N-channel MOSFET with VDSS of 30V and 115mA continuous drain current (Note 5). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | 2 | |||
| Gain-Source Voltage | VGSS | 20 | V | 2 | |||
| Drain Current (Note 5) Continuous | ID | 115 | mA | 2 | |||
| Total Power Dissipation (Note 5) | PD | 240 | mW | 2 | |||
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | 521 | °C/W | 2 | |||
| Total Power Dissipation (Note 6) | PD | 300 | mW | 2 | |||
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 420 | °C/W | 2 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30V, VGS = 0V | 2 | ||
| Gate-Body Leakage | IGSS | -10 | 10 | µA | VGS = ±20V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 0.8 | 1.5 | V | VDS = 3V, ID = 100µA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 5 | Ω | VGS = 4V, ID = 10mA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 7 | Ω | VGS = 2.5V, ID = 5mA | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS = 115mA | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Matte Tin Finish Annealed Over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
DMN33D8LTQ-13 - Footprint:
Package_TO_SOT_SMD:SOT-523 - 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
dmn33d8ltq-13-etched.step/dmn33d8ltq-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn33d8ltq-13.step/dmn33d8ltq-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
50991ba102866f4e, retrieved 2026-10-21, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMN33D8LTQ-13
**Diodes Incorporated** · MOSFETs · SOT-523
DMN33D8LTQ-13 from Diodes Incorporated, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, ESD protected (2kV) with internal gate protection diode; VGSS maximum ±20V and threshold 0.8V to 1.5V at VDS = 3V, ID = 100µA. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; drain current is 115mA continuous (Note 5). |
| 3 | D | passive | Drain terminal of the N-channel MOSFET with VDSS of 30V and 115mA continuous drain current (Note 5). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 30 | V | | 2 |
| Gain-Source Voltage | VGSS | | | 20 | V | | 2 |
| Drain Current (Note 5) Continuous | ID | | | 115 | mA | | 2 |
| Total Power Dissipation (Note 5) | PD | | | 240 | mW | | 2 |
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | | | 521 | °C/W | | 2 |
| Total Power Dissipation (Note 6) | PD | | | 300 | mW | | 2 |
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | | | 420 | °C/W | | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 30V, VGS = 0V | 2 |
| Gate-Body Leakage | IGSS | -10 | | 10 | µA | VGS = ±20V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 0.8 | | 1.5 | V | VDS = 3V, ID = 100µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 5 | Ω | VGS = 4V, ID = 10mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 7 | Ω | VGS = 2.5V, ID = 5mA | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS = 0V, IS = 115mA | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | Terminals: Matte Tin Finish Annealed Over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 | 1 |
## CAD (KiCad official)
- Symbol: `DMN33D8LTQ-13`
- Footprint: `Package_TO_SOT_SMD:SOT-523`
- 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `dmn33d8ltq-13-etched.step` / `dmn33d8ltq-13-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn33d8ltq-13.step` / `dmn33d8ltq-13.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/DMN33D8LTQ-13.pdf) (6 pp, sha256 `50991ba102866f4e`, retrieved 2026-10-21, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmn33d8ltq-13-datasheet.pdf)