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Contents

README

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DMN33D8LT-7

Diodes Incorporated · MOSFETs · SOT-523

DMN33D8LT-7 from Diodes Incorporated, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, ESD protected to 2kV by an internal gate protection diode, with VGSS rated 20V and threshold VGS(TH) of 0.8V to 1.5V.
2 S passive Source of the N-channel MOSFET, with the body diode running from source to drain (VSD max 1.2V at IS = 115mA).
3 D passive Drain of the N-channel MOSFET, rated VDSS 30V with continuous ID of 115mA (RDS(ON) 5Ω at VGS = 4V).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-523
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250µA 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30V, VGS = 0V 3
Gate-Body Leakage IGSS -10 10 µA VGS = ±20V, VDS = 0V 3
Gate Threshold Voltage VGS(TH) 0.8 1.5 V VDS = 3V, ID = 100µA 3
Static Drain-Source On-Resistance RDS(ON) 5 Ω VGS = 4V, ID = 10mA 3
Static Drain-Source On-Resistance RDS(ON) 7 Ω VGS = 2.5V, ID = 5mA 3
Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 115mA 3
Drain-Source Voltage VDSS 30 V TA = +25°C 2
Gate-Source Voltage VGSS 20 V TA = +25°C 2
Continuous Drain Current ID 115 mA TA = +25°C, Note 5 2
Total Power Dissipation PD 240 mW Note 5, TA = +25°C 2
Total Power Dissipation PD 300 mW Note 6, TA = +25°C 2
Thermal Resistance, Junction to Ambient RθJA 521 °C/W Note 5 2
Thermal Resistance, Junction to Ambient RθJA 420 °C/W Note 6 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Input Capacitance Ciss 48 pF VDS = 5V, VGS = 0V, f = 1.0MHz 3
Output Capacitance Coss 11 pF VDS = 5V, VGS = 0V, f = 1.0MHz 3
Reverse Transfer Capacitance Crss 8 pF VDS = 5V, VGS = 0V, f = 1.0MHz 3
Total Gate Charge (VGS = 4.5V) Qg 0.55 nC VDS = 10V, ID = 250mA 3
Total Gate Charge (VGS = 10V) Qg 1.23 nC VDS = 10V, ID = 250mA 3
Gate-Source Charge Qgs 0.14 nC VDS = 10V, ID = 250mA 3
Gate-Drain Charge Qgd 0.14 nC VDS = 10V, ID = 250mA 3
Turn-On Delay Time tD(ON) 2.9 ns VDD = 30V, ID = 0.2A, VGEN = 10V, RGEN = 25 3
Turn-On Rise Time tR 2.6 ns VDD = 30V, ID = 0.2A, VGEN = 10V, RGEN = 25 3
Turn-Off Delay Time tD(OFF) 18.2 ns VDD = 30V, ID = 0.2A, VGEN = 10V, RGEN = 25 3
Turn-Off Fall Time tF 13.6 ns VDD = 30V, ID = 0.2A, VGEN = 10V, RGEN = 25 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Matte Tin Finish Annealed Over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: DMN33D8LT-7
  • Footprint: Package_TO_SOT_SMD:SOT-523
  • 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: dmn33d8lt-7-etched.step / dmn33d8lt-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn33d8lt-7.step / dmn33d8lt-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 ea44c5942262f8d8, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF