DMN33D8LDWQ-7

{
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  "type": "component",
  "slug": "dmn33d8ldwq-7",
  "title": "DMN33D8LDWQ-7",
  "brief": "Diodes Incorporated MOSFETs, SOT-363. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
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  "component": {
    "mpn": "DMN33D8LDWQ-7",
    "manufacturer": "Diodes Incorporated",
    "package": "SOT-363",
    "pin_count": 6,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603603016188637184",
    "parts": {
      "symbol": "dmn33d8ldwq-7.kicad_sym",
      "footprint": "dmn33d8ldwq-7.kicad_mod",
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      "lbr": "dmn33d8ldwq-7.lbr"
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    "pins": [
      {
        "number": "1",
        "name": "S1",
        "type": "passive",
        "description": "Source of MOSFET Q1 (N-channel). Body-diode anode. Reference terminal for VGS1 and current return for Q1's channel."
      },
      {
        "number": "2",
        "name": "G1",
        "type": "input",
        "description": "Gate of MOSFET Q1 (N-channel). VGS(th) = 0.8-1.5 V; absolute maximum VGSS = ±20 V. High-impedance MOS input; requires ESD-safe handling although the device is ESD protected."
      },
      {
        "number": "3",
        "name": "D2",
        "type": "passive",
        "description": "Drain of MOSFET Q2 (N-channel). BVDSS = 30 V; ID = 250 mA max @ TA = +25 °C, VGS = 4.5 V. Body-diode cathode for Q2."
      },
      {
        "number": "4",
        "name": "S2",
        "type": "passive",
        "description": "Source of MOSFET Q2 (N-channel). Body-diode anode. Reference terminal for VGS2 and current return for Q2's channel."
      },
      {
        "number": "5",
        "name": "G2",
        "type": "input",
        "description": "Gate of MOSFET Q2 (N-channel). VGS(th) = 0.8-1.5 V; absolute maximum VGSS = ±20 V. High-impedance MOS input."
      },
      {
        "number": "6",
        "name": "D1",
        "type": "passive",
        "description": "Drain of MOSFET Q1 (N-channel). BVDSS = 30 V; ID = 250 mA max @ TA = +25 °C, VGS = 4.5 V. Body-diode cathode for Q1."
      }
    ],
    "provenance": {
      "extractor": "ds2sf",
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603603016188637184",
        "pages": null,
        "sha256": "8b2f04811fccb631",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 6,
        "described": 6,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
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        "seat": "z = 0",
        "extents_mm": [
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          2,
          1.1
        ],
        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "045cc95e18ee7a13d1623c3ce6604fc833049bdb4f952f68c26e3c5767d122e4",
        "checked": "2026-10-07",
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        "sha256": "7a06cbd27a2310e706ee9b2b5e184513cd5b426a99a4c668c1ca4d0999ad9f29",
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    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "Diodes Incorporated",
      "Package": "SOT-363",
      "Category": "Transistors/Thyristors",
      "Pins": "6"
    }
  },
  "variants": [
    {
      "mpn": "DMN33D8LDWQ-7",
      "kind": "packaging"
    },
    {
      "mpn": "DMN33D8LDWQ-7-13",
      "kind": "packaging"
    }
  ],
  "sections": [
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  "discovery_triggers": [
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  "discovery_pitch": "DMN33D8LDWQ-7 (Diodes Incorporated) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray"
  },
  "dependencies": {},
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    "path": "docs/hero.png"
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  "files": [
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  "visibility": {
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  },
  "updated_at": "2026-09-24T19:50:54.414Z"
}