component
DMN33D8LDWQ-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-363. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
main
Ray
dmn33d8ldwq-7: laser-etched CAD + chip hero (factory 2.0.0 backfill)
bcf0d97
DMN33D8LDWQ-7
Diodes Incorporated · MOSFETs · SOT-363
DMN33D8LDWQ-7 from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET Q1 (N-channel). Body-diode anode. Reference terminal for VGS1 and current return for Q1's channel. |
| 2 | G1 | input | Gate of MOSFET Q1 (N-channel). VGS(th) = 0.8-1.5 V; absolute maximum VGSS = ±20 V. High-impedance MOS input; requires ESD-safe handling although the device is ESD protected. |
| 3 | D2 | passive | Drain of MOSFET Q2 (N-channel). BVDSS = 30 V; ID = 250 mA max @ TA = +25 °C, VGS = 4.5 V. Body-diode cathode for Q2. |
| 4 | S2 | passive | Source of MOSFET Q2 (N-channel). Body-diode anode. Reference terminal for VGS2 and current return for Q2's channel. |
| 5 | G2 | input | Gate of MOSFET Q2 (N-channel). VGS(th) = 0.8-1.5 V; absolute maximum VGSS = ±20 V. High-impedance MOS input. |
| 6 | D1 | passive | Drain of MOSFET Q1 (N-channel). BVDSS = 30 V; ID = 250 mA max @ TA = +25 °C, VGS = 4.5 V. Body-diode cathode for Q1. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Ordering variants
Same part, different packaging or reel option.
DMN33D8LDWQ-7DMN33D8LDWQ-7-13
CAD (KiCad official)
- Symbol:
DMN33D8LDWQ-7 - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
dmn33d8ldwq-7-etched.step/dmn33d8ldwq-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn33d8ldwq-7.step/dmn33d8ldwq-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (None pp, sha256
8b2f04811fccb631, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMN33D8LDWQ-7
**Diodes Incorporated** · MOSFETs · SOT-363
DMN33D8LDWQ-7 from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET Q1 (N-channel). Body-diode anode. Reference terminal for VGS1 and current return for Q1's channel. |
| 2 | G1 | input | Gate of MOSFET Q1 (N-channel). VGS(th) = 0.8-1.5 V; absolute maximum VGSS = ±20 V. High-impedance MOS input; requires ESD-safe handling although the device is ESD protected. |
| 3 | D2 | passive | Drain of MOSFET Q2 (N-channel). BVDSS = 30 V; ID = 250 mA max @ TA = +25 °C, VGS = 4.5 V. Body-diode cathode for Q2. |
| 4 | S2 | passive | Source of MOSFET Q2 (N-channel). Body-diode anode. Reference terminal for VGS2 and current return for Q2's channel. |
| 5 | G2 | input | Gate of MOSFET Q2 (N-channel). VGS(th) = 0.8-1.5 V; absolute maximum VGSS = ±20 V. High-impedance MOS input. |
| 6 | D1 | passive | Drain of MOSFET Q1 (N-channel). BVDSS = 30 V; ID = 250 mA max @ TA = +25 °C, VGS = 4.5 V. Body-diode cathode for Q1. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Ordering variants
Same part, different packaging or reel option.
- `DMN33D8LDWQ-7`
- `DMN33D8LDWQ-7-13`
## CAD (KiCad official)
- Symbol: `DMN33D8LDWQ-7`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `dmn33d8ldwq-7-etched.step` / `dmn33d8ldwq-7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn33d8ldwq-7.step` / `dmn33d8ldwq-7.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603603016188637184) (None pp, sha256 `8b2f04811fccb631`, retrieved 2026-08-17, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmn33d8ldwq-7-datasheet.pdf)