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DMN33D8LDW-7

Public Made by Adom

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Diodes Incorporated MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMN33D8LDW-7

Diodes Incorporated · MOSFETs · SOT-363

DMN33D8LDW-7 from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET Q1 (bottom-left in top view); drain-source rating 30V.
2 G1 input Gate of Q1, ESD protected to 2kV, VGSS max ±20V, threshold 0.8V to 1.5V.
3 D2 passive Drain of N-channel MOSFET Q2 (bottom-right in top view); VDSS 30V, 250mA continuous at VGS=4.5V.
4 S2 passive Source of N-channel MOSFET Q2 (top-right in top view); drain-source rating 30V.
5 G2 input Gate of Q2, ESD protected to 2kV, VGSS max ±20V, threshold 0.8V to 1.5V.
6 D1 passive Drain of N-channel MOSFET Q1 (top-left in top view); VDSS 30V, 250mA continuous at VGS=4.5V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 1mA 2
Zero Gate Voltage Drain Current @TC = +25°C IDSS 1 μA VDS = 30V, VGS = 0V 2
Gate-Source Leakage IGSS -10 10 μA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 0.8 1.5 V VDS = 3V, ID = 100μA 2
Static Drain-Source On-Resistance RDS(ON) 2.4 Ω VGS = 10V, ID = 250mA 2
Static Drain-Source On-Resistance RDS(ON) 3 Ω VGS = 4.5V, ID = 250mA 2
Static Drain-Source On-Resistance RDS(ON) 5 Ω VGS = 4.0V, ID = 10mA 2
Static Drain-Source On-Resistance RDS(ON) 7 Ω VGS = 2.5V, ID = 5mA 2
Static Drain-Source On-Resistance RDS(ON) 20 Ω VGS = 1.8V, ID = 5mA 2
Forward Transfer Admittance /Yfs/ 10 mS VDS = 3V, ID = 10mA 2
Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 115mA 2
Drain-Source Voltage VDSS 30 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current (Note 5) ID 250 mA VGS = 4.5V, steady state, TA = +25°C 2
Continuous Drain Current (Note 5) ID 200 mA VGS = 4.5V, steady state, TA = +70°C 2
Maximum Continuous Body Diode Forward Current (Note 5) IS 0.5 A 2
Pulsed Drain Current IDM 0.8 A 10µs pulse, duty cycle=1% 2
Total Power Dissipation (Note 5) PD 0.35 W TA = +25°C 2
Total Power Dissipation (Note 5) PD 0.22 W TA = +70°C 2
Thermal Resistance, Junction to Ambient (Note 5), Steady State RθJA 360 °C/W 2
Thermal Resistance, Junction to Case RθJC 126 °C/W 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin • Terminal Connections Indicator: See diagram • Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe. 1

CAD (KiCad official)

  • Symbol: DMN33D8LDW-7
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: dmn33d8ldw-7-etched.step / dmn33d8ldw-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn33d8ldw-7.step / dmn33d8ldw-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 86fd9a61afc9060c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF