# DMN3300U-HXY

**HXY MOSFET** · MOSFETs · SOT-23

DMN3300U-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MOSFET; VGS is limited to ±12 V, the threshold VGS(th) is 0.4 V min to 1.2 V max at VDS = VGS and ID = 250 µA, and the part is rated for operation with gate drive as low as 2.5 V. |
| 2 | D | passive | Drain of the MOSFET; drain-source breakdown is 30 V min, continuous drain current is 5 A and pulsed drain current is 14.4 A, with RDS(ON) below 42 mΩ at VGS = 10 V. |
| 3 | S | passive | Source of the MOSFET; continuous source current is limited to 3.6 A, and the body diode forward voltage is 1.2 V max at IS = 1 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 5 | A |  | 1 |
| Drain Current-Pulsed | IDM |  |  | 14.4 | A | Note 1 | 1 |
| Maximum Power Dissipation | PD |  |  | 1 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 125 | ℃/W | Note 2 | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 42 | mΩ | VGS=10V, ID=3A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 48 | mΩ | VGS=4.5V, ID=2A | 2 |
| Gate Threshold Voltage | VGS(th) | 0.4 |  | 1.2 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=16V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=16V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±12V, VDS=0V | 2 |
| Continuous Source Current | IS |  |  | 3.6 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `DMN3300U-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `dmn3300u-hxy-etched.step` / `dmn3300u-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn3300u-hxy.step` / `dmn3300u-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/dmn3300u-hxy-datasheet.pdf) (6 pp, sha256 `dd6904417804f8b7`, retrieved 2026-11-12, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dmn3300u-hxy-datasheet.pdf)