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DMN32D2LV-7

Public Made by Adom

by adom

Diodes Incorporated MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMN32D2LV-7

Diodes Incorporated · MOSFETs · SOT-563

DMN32D2LV-7 from Diodes Incorporated, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of N-channel MOSFET 2, shown at bottom-left of the top-view diagram.
2 G2 input ESD-protected gate of MOSFET 2, with a gate threshold voltage of 0.6V min to 1.2V max and VGSS rating of 10V.
3 D1 passive Drain of MOSFET 1, rated for VDSS of 30V and 400mA drain current.
4 S1 passive Source of N-channel MOSFET 1, shown at top-right of the top-view diagram.
5 G1 input ESD-protected gate of MOSFET 1, with a gate threshold voltage of 0.6V min to 1.2V max and VGSS rating of 10V.
6 D2 passive Drain of MOSFET 2, rated for VDSS of 30V and 400mA drain current.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-563
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 30 V 2
Gate-Source Voltage VGSS 10 V 2
Drain Current ID 400 mA Note 5 2
Total Power Dissipation PD 450 mW Note 5 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Thermal Resistance, Junction to Ambient RθJA 313 °C/W Note 5 2
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250μA 2
Zero Gate Voltage Drain Current @TJ = +25°C IDSS 1 μA VDS = 30V, VGS = 0V 2
Gate-Body Leakage @TJ = +25°C IGSS 1 μA VGS = ±10V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 0.6 1.2 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(ON) 2.2 Ω VGS = 1.8V, ID = 20mA 2
Static Drain-Source On-Resistance RDS(ON) 1.5 Ω VGS = 2.5V, ID = 20mA 2
Static Drain-Source On-Resistance RDS(ON) 1.2 Ω VGS = 4.0V, ID = 100mA 2
Forward Transconductance /YFS/ 100 mS VDS = 10V, ID = 0.1A 2
Source-Drain Diode Forward Voltage VSD 0.5 1.4 V VGS = 0V, IS = 115mA 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminal Connections: See Diagram  Terminals: Finish, Matte Tin Annealed over Copper Leadframe. 1

CAD (KiCad official)

  • Symbol: DMN32D2LV-7
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: dmn32d2lv-7-etched.step / dmn32d2lv-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn32d2lv-7.step / dmn32d2lv-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 2e02da8c8f799f26, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF