component
DMN31D5UDJ-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-963. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DMN31D5UDJ-7
Diodes Incorporated · MOSFETs · SOT-963
DMN31D5UDJ-7 from Diodes Incorporated, in a SOT-963. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of Q1 N-channel MOSFET (30V BVDSS, 0.22A ID max), at the pin-1 dot corner. |
| 2 | G1 | passive | ESD-protected gate of Q1 with an internal gate protection diode; VGS rated ±12V and threshold 0.4V to 1.0V. |
| 3 | D2 | passive | Drain of Q2 N-channel MOSFET, rated 30V VDSS and 0.22A continuous at TA = +25°C. |
| 4 | S2 | passive | Source of Q2 N-channel MOSFET (30V BVDSS, 0.22A ID max). |
| 5 | G2 | passive | ESD-protected gate of Q2 with an internal gate protection diode; VGS rated ±12V and threshold 0.4V to 1.0V. |
| 6 | D1 | passive | Drain of Q1 N-channel MOSFET, rated 30V VDSS and 0.22A continuous at TA = +25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-963 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | nA | VDS = 24V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -10 | 10 | µA | VGS = ±10V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 0.4 | 1 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.9 | 1.5 | Ω | VGS = 4.5V, ID = 100mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 1 | 2 | Ω | VGS = 2.5V, ID = 50mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 1.2 | 3 | Ω | VGS = 1.8V, ID = 20mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 1.4 | 4.5 | Ω | VGS = 1.5V, ID = 10mA | 2 | |
| Diode Forward Voltage | VSD | 0.6 | 1 | V | VGS = 0V, IS = 10mA | 2 | |
| Input Capacitance | Ciss | 22.6 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 2.68 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 1.8 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Total Gate Charge | Qg | 0.38 | nC | VGS = 4.5V, VDS = 15V, ID = 200mA | 2 | ||
| Gate-Source Charge | Qgs | 0.05 | nC | VGS = 4.5V, VDS = 15V, ID = 200mA | 2 | ||
| Gate-Drain Charge | Qgd | 0.07 | nC | VGS = 4.5V, VDS = 15V, ID = 200mA | 2 | ||
| Turn-On Delay Time | tD(ON) | 3.2 | ns | VDD = 15V, VGS = 4.5V, RG = 2Ω, ID = 200mA | 2 | ||
| Turn-On Rise Time | tR | 2.2 | ns | VDD = 15V, VGS = 4.5V, RG = 2Ω, ID = 200mA | 2 | ||
| Turn-Off Delay Time | tD(OFF) | 21 | ns | VDD = 15V, VGS = 4.5V, RG = 2Ω, ID = 200mA | 2 | ||
| Turn-Off Fall Time | tF | 7.5 | ns | VDD = 15V, VGS = 4.5V, RG = 2Ω, ID = 200mA | 2 | ||
| Drain-Source Voltage | VDSS | 30 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | -12 | 12 | V | TA = +25°C | 2 | |
| Continuous Drain Current | ID | 220 | mA | VGS = 4.5V, Steady State, TA = +25°C | 2 | ||
| Continuous Drain Current | ID | 160 | mA | VGS = 4.5V, Steady State, TA = +70°C | 2 | ||
| Maximum Continuous Body Diode Forward Current | IS | 200 | mA | TA = +25°C | 2 | ||
| Total Power Dissipation | PD | 350 | mW | TA = +25°C | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 361 | °C/W | Steady State | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMN31D5UDJ-7 - Footprint:
Package_TO_SOT_SMD:SOT-963 - 3D model: SOT-963 (KiCad packages3D, STEP)
- 3D model files:
dmn31d5udj-7-etched.step/dmn31d5udj-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn31d5udj-7.step/dmn31d5udj-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
84d8d49f44cb63f9, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMN31D5UDJ-7
**Diodes Incorporated** · MOSFETs · SOT-963
DMN31D5UDJ-7 from Diodes Incorporated, in a SOT-963. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of Q1 N-channel MOSFET (30V BVDSS, 0.22A ID max), at the pin-1 dot corner. |
| 2 | G1 | passive | ESD-protected gate of Q1 with an internal gate protection diode; VGS rated ±12V and threshold 0.4V to 1.0V. |
| 3 | D2 | passive | Drain of Q2 N-channel MOSFET, rated 30V VDSS and 0.22A continuous at TA = +25°C. |
| 4 | S2 | passive | Source of Q2 N-channel MOSFET (30V BVDSS, 0.22A ID max). |
| 5 | G2 | passive | ESD-protected gate of Q2 with an internal gate protection diode; VGS rated ±12V and threshold 0.4V to 1.0V. |
| 6 | D1 | passive | Drain of Q1 N-channel MOSFET, rated 30V VDSS and 0.22A continuous at TA = +25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-963 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS = 0V, ID = 250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 100 | nA | VDS = 24V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -10 | | 10 | µA | VGS = ±10V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 0.4 | | 1 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 0.9 | 1.5 | Ω | VGS = 4.5V, ID = 100mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 1 | 2 | Ω | VGS = 2.5V, ID = 50mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 1.2 | 3 | Ω | VGS = 1.8V, ID = 20mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 1.4 | 4.5 | Ω | VGS = 1.5V, ID = 10mA | 2 |
| Diode Forward Voltage | VSD | | 0.6 | 1 | V | VGS = 0V, IS = 10mA | 2 |
| Input Capacitance | Ciss | | 22.6 | | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 2.68 | | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 1.8 | | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 |
| Total Gate Charge | Qg | | 0.38 | | nC | VGS = 4.5V, VDS = 15V, ID = 200mA | 2 |
| Gate-Source Charge | Qgs | | 0.05 | | nC | VGS = 4.5V, VDS = 15V, ID = 200mA | 2 |
| Gate-Drain Charge | Qgd | | 0.07 | | nC | VGS = 4.5V, VDS = 15V, ID = 200mA | 2 |
| Turn-On Delay Time | tD(ON) | | 3.2 | | ns | VDD = 15V, VGS = 4.5V, RG = 2Ω, ID = 200mA | 2 |
| Turn-On Rise Time | tR | | 2.2 | | ns | VDD = 15V, VGS = 4.5V, RG = 2Ω, ID = 200mA | 2 |
| Turn-Off Delay Time | tD(OFF) | | 21 | | ns | VDD = 15V, VGS = 4.5V, RG = 2Ω, ID = 200mA | 2 |
| Turn-Off Fall Time | tF | | 7.5 | | ns | VDD = 15V, VGS = 4.5V, RG = 2Ω, ID = 200mA | 2 |
| Drain-Source Voltage | VDSS | | | 30 | V | TA = +25°C | 2 |
| Gate-Source Voltage | VGSS | -12 | | 12 | V | TA = +25°C | 2 |
| Continuous Drain Current | ID | | | 220 | mA | VGS = 4.5V, Steady State, TA = +25°C | 2 |
| Continuous Drain Current | ID | | | 160 | mA | VGS = 4.5V, Steady State, TA = +70°C | 2 |
| Maximum Continuous Body Diode Forward Current | IS | | | 200 | mA | TA = +25°C | 2 |
| Total Power Dissipation | PD | | | 350 | mW | TA = +25°C | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | 361 | | °C/W | Steady State | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. | 1 |
## CAD (KiCad official)
- Symbol: `DMN31D5UDJ-7`
- Footprint: `Package_TO_SOT_SMD:SOT-963`
- 3D model: SOT-963 (KiCad packages3D, STEP)
- 3D model files: `dmn31d5udj-7-etched.step` / `dmn31d5udj-7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn31d5udj-7.step` / `dmn31d5udj-7.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/DMN31D5UDJ-7.pdf) (6 pp, sha256 `84d8d49f44cb63f9`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmn31d5udj-7-datasheet.pdf)