component
DMN3051L-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDMN3051L-7
Diodes Incorporated · MOSFETs · SOT-23
DMN3051L-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drives the N-channel MOSFET, with VGS rated ±20 V maximum and a threshold of 1.3 V min to 2.2 V max at ID = 250 µA. |
| 2 | S | passive | Source; the body diode runs from source to drain, with maximum continuous body diode current IS of 2 A. |
| 3 | D | passive | Drain; VDSS is 30 V maximum, with continuous ID of 4.5 A steady state and 5.8 A for t<5s at TA = +25°C (VGS = 10 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 800 | nA | VDS = 28V, VGS = 0V | 2 | ||
| Gate-Body Leakage | IGSS | 80 | nA | VGS = ±12V, VDS = 0V | 2 | ||
| Gate-Body Leakage | IGSS | 800 | nA | VGS = ±20V, VDS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 1.3 | 1.9 | 2.2 | V | VDS = VGS, ID = 250 µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 33 | 38 | mΩ | VGS = 10V, ID = 5.8A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 54 | 64 | mΩ | VGS = 4.5V, ID = 5.0A | 2 | |
| Source-Drain Diode Forward Voltage | VSD | 0.78 | 1.16 | V | VGS = 0V, IS = 2.0A | 2 | |
| Drain-Source Voltage | VDSS | 30 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TA = +25°C | 2 | |
| Continuous Drain Current, Steady State | ID | 4.5 | A | VGS = 10V, TA = +25°C, Note 6 | 2 | ||
| Continuous Drain Current, Steady State | ID | 3.5 | A | VGS = 10V, TA = +70°C, Note 6 | 2 | ||
| Continuous Drain Current, t<5s | ID | 5.8 | A | VGS = 10V, TA = +25°C, Note 6 | 2 | ||
| Continuous Drain Current, t<5s | ID | 4.9 | A | VGS = 10V, TA = +70°C, Note 6 | 2 | ||
| Pulsed Drain Current | IDM | 20 | A | 10µs Pulse, Duty Cycle = 1% | 2 | ||
| Maximum Body Diode Forward Current | IS | 2 | A | Note 6 | 2 | ||
| Total Power Dissipation (Note 5) | PD | 0.7 | W | TA = +25°C | 2 | ||
| Total Power Dissipation (Note 5) | PD | 0.44 | W | TA = +70°C | 2 | ||
| Total Power Dissipation (Note 6) | PD | 1.4 | W | TA = +25°C | 2 | ||
| Total Power Dissipation (Note 6) | PD | 0.85 | W | TA = +70°C | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | 182 | °C/W | Steady State | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | 109 | °C/W | t < 5s | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 94 | °C/W | Steady State | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 56 | °C/W | t < 5s | 2 | ||
| Thermal Resistance, Junction to Case (Note 6) | RθJC | 25 | °C/W | 2 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Forward Transconductance | /Yfs/ | 5 | S | VDS = 5V, ID = 3.1A | 2 | ||
| Input Capacitance | Ciss | 424 | pF | VDS = 5V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 115 | pF | VDS = 5V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 81 | pF | VDS = 5V, VGS = 0V, f = 1.0MHz | 2 | ||
| Gate Resistance | Rg | 1.51 | Ω | VDS = 0V, VGS = 0V, f = 1MHz | 2 | ||
| Total Gate Charge | Qg | 9 | nC | VGS = 10V, VDS = 15V, ID = 5.8A | 2 | ||
| Gate-Source Charge | Qgs | 1.3 | nC | VGS = 10V, VDS = 15V, ID = 5.8A | 2 | ||
| Gate-Drain Charge | Qgd | 1.3 | nC | VGS = 10V, VDS = 15V, ID = 5.8A | 2 | ||
| Turn-On Delay Time | tD(ON) | 3.4 | ns | VDD = 15V, VGS = 10V, RL = 2.6Ω, Rg = 3Ω | 2 | ||
| Turn-On Rise Time | tR | 6.2 | ns | VDD = 15V, VGS = 10V, RL = 2.6Ω, Rg = 3Ω | 2 | ||
| Turn-Off Delay Time | tD(OFF) | 13.9 | ns | VDD = 15V, VGS = 10V, RL = 2.6Ω, Rg = 3Ω | 2 | ||
| Turn-Off Fall Time | tF | 2.8 | ns | VDD = 15V, VGS = 10V, RL = 2.6Ω, Rg = 3Ω | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminals: Finish, Matte Tin Annealed over Copper | 1 |
CAD (KiCad official)
- Symbol:
DMN3051L-7 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
dmn3051l-7-etched.step/dmn3051l-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn3051l-7.step/dmn3051l-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
b074bd3c1e2edd90, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).