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DMN3033LSNQ-HXY

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HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistordmn3033lsnq-hxyfactory-2.0.0extractor-text

Verified DMN3033LSNQ-HXY

by Ray · last 12 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

12 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: DMN3033LSNQ-HXY · SOT-23 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 6-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOT-23
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-mxzpij49/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.5)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓viewers: viewers/footprint.html 17 kB, viewers/symbol.html 8 kB
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ dmn3033lsnq-hxy.kicad_sym✓ dmn3033lsnq-hxy.kicad_mod✓ dmn3033lsnq-hxy.step
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Ray Publish 0.1.0 2cb3970

DMN3033LSNQ-HXY

HXY MOSFET · MOSFETs · SOT-23

DMN3033LSNQ-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the gate-source voltage is rated at ±20 V in the absolute maximum ratings.
2 D passive Drain terminal; the datasheet rates drain-source voltage at 30 V and continuous drain current at 5.8 A.
3 S passive Source terminal; the datasheet gives continuous source current of 4.6 A and pulsed source current of 18.4 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 22 28 mΩ VGS=10V , ID=4A 2
Static Drain-Source On-Resistance RDS(ON) 26 32 mΩ VGS=4.5V , ID=3A 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Gate Resistance Rg 2.3 4.6 Ω VDS=0V , VGS=0V , f=1MHz 2
Total Gate Charge (4.5V) Qg 5 6.9 nC VDS=15V , VGS=4.5V , ID=4A 2
Gate-Source Charge Qgs 1.1 2.2 nC 2
Gate-Drain Charge Qgd 2.6 2.8 nC 2
Turn-On Delay Time Td(on) 2 4 ns VDD=15V , VGS=10V , RG=3.3 ID=4A 2
Rise Time Tr 34.4 62 ns VDD=15V , VGS=10V , RG=3.3 ID=4A 2
Turn-Off Delay Time Td(off) 13.2 26 ns VDD=15V , VGS=10V , RG=3.3 ID=4A 2
Fall Time Tf 4.8 9.6 ns VDD=15V , VGS=10V , RG=3.3 ID=4A 2
Input Capacitance Ciss 420 582 pF VDS=15V , VGS=0V , f=1MHz 2
Output Capacitance Coss 60 87 pF VDS=15V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 53 71 pF VDS=15V , VGS=0V , f=1MHz 2
Continuous Source Current IS 4.6 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 18.4 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
Drain-Source Voltage VDS 30 V Absolute maximum rating, TA=25℃ 1
Gate-Source Voltage VGS -20 20 V Absolute maximum rating, TA=25℃ 1
Drain Current-Continuous ID 5.8 A Absolute maximum rating, TA=25℃ 1
Drain Current-Pulsed IDM 18.4 A Note 1, absolute maximum rating, TA=25℃ 1
Maximum Power Dissipation PD 1 W Absolute maximum rating, TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ Absolute maximum rating 1
Thermal Resistance, Junction-to-Ambient RθJA 125 ℃/W Note 2 1

CAD (KiCad official)

  • Symbol: DMN3033LSNQ-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dmn3033lsnq-hxy-etched.step / dmn3033lsnq-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn3033lsnq-hxy.step / dmn3033lsnq-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 d8475b4e1bf9f351, retrieved 2026-11-12, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF