# DMN3030LSS-13

**Diodes Incorporated** · MOSFETs · SO-8

DMN3030LSS-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, shown on the top-view internal schematic at pin 1 and tied to the other source pins. |
| 2 | S | passive | Source of the N-channel MOSFET, shown on the top-view internal schematic at pin 2 and tied to the other source pins. |
| 3 | S | passive | Source of the N-channel MOSFET, shown on the top-view internal schematic at pin 3 and tied to the other source pins. |
| 4 | G | input | Gate of the N-channel MOSFET, with a threshold VGS(th) of 1 V min to 2.1 V max at ID = 250 µA and a VGSS rating of 25 V. |
| 5 | D | passive | Drain of the N-channel MOSFET, rated 30 V VDSS and tied to the other drain pins. |
| 6 | D | passive | Drain of the N-channel MOSFET, rated 30 V VDSS and tied to the other drain pins. |
| 7 | D | passive | Drain of the N-channel MOSFET, rated 30 V VDSS and tied to the other drain pins. |
| 8 | D | passive | Drain of the N-channel MOSFET, rated 30 V VDSS and tied to the other drain pins. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 30 | V | TA = +25°C | 2 |
| Gate-Source Voltage | VGSS |  |  | 25 | V | TA = +25°C | 2 |
| Drain Current, steady state | ID |  |  | 9 | A | TA = +25°C, Note 6 | 2 |
| Drain Current, steady state | ID |  |  | 6.75 | A | TA = +70°C, Note 6 | 2 |
| Pulsed Drain Current | IDM |  |  | 40 | A | 10µs Pulse, Duty Cycle = 1% | 2 |
| Total Power Dissipation | PD |  |  | 1.7 | W | Note 5 | 2 |
| Total Power Dissipation | PD |  |  | 2.5 | W | Note 6 | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  | 73 |  | °C/W | Note 5 | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  | 50 |  | °C/W | Note 6 | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS = 0V, ID = 250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 30V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS |  |  | 100 | nA | VGS = 20V, VDS = 0V | 2 |
| Gate-Source Leakage | IGSS |  |  | 1 | μA | VGS = 25V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 |  | 2.1 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 15.7 | 18 | mΩ | VGS = 10V, ID = 9A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 26.4 | 30 | mΩ | VGS = 4.5V, ID = 7A | 2 |
| Diode Forward Voltage | VSD | 0.5 | 0.7 | 1.2 | V | VGS = 0V, IS = 2.1A | 2 |
| Gate Resistance | RG | 0.3 | 0.88 | 2.5 | Ω | VDS = 0V, VGS = 0V, f = 1.0MHz | 2 |
| Total Gate Charge | Qg |  | 7.6 | 12 | nC | VDS = 15V, VGS = 4.5V, ID = 9A | 2 |
| Total Gate Charge | Qg |  | 16.7 | 25 | nC | VDS = 15V, VGS = 10V, ID = 9A | 2 |
| Forward Transconductance | gfs |  | 5.8 |  | S | VDS = 10V, ID = 9A | 2 |
| Input Capacitance | Ciss |  | 741 |  | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 |
| Output Capacitance | Coss |  | 124 |  | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 95 |  | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 |
| Gate-Source Charge | Qgs |  | 1.9 |  | nC | VDS = 15V, VGS = 10V, ID = 9A | 2 |
| Gate-Drain Charge | Qgd |  | 5.2 |  | nC | VDS = 15V, VGS = 10V, ID = 9A | 2 |
| Turn-On Delay Time | td(on) |  | 4 |  | ns | VGS = 10V, VDS = 15V, RL = 15Ω, RG = 6Ω | 2 |
| Rise Time | tr |  | 4.4 |  | ns | VGS = 10V, VDS = 15V, RL = 15Ω, RG = 6Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 23 |  | ns | VGS = 10V, VDS = 15V, RL = 15Ω, RG = 6Ω | 2 |
| Fall Time | tf |  | 9.4 |  | ns | VGS = 10V, VDS = 15V, RL = 15Ω, RG = 6Ω | 2 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin |  Terminals Connections: See Diagram  Terminals: Finish, Matte Tin Annealed over Copper Leadframe. | 1 |

## CAD (KiCad official)

- Symbol: `DMN3030LSS-13`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `dmn3030lss-13-etched.step` / `dmn3030lss-13-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn3030lss-13.step` / `dmn3030lss-13.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/DMN3030LSS-13.pdf) (6 pp, sha256 `49e8736418d8a13c`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dmn3030lss-13-datasheet.pdf)