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DMN3026LVT-7

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Diodes Incorporated MOSFETs, TSOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistordmn3026lvt-7factory-2.0.0extractor-text

Verified DMN3026LVT-7

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier mfr, 6 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: DMN3026LVT-7 · TSOT-23-6 · 6 pins
  • ✓copper: 6 copper pads, none touching another net
  • ✓datasheet: all 6 pin names found in the 6-page datasheet
  • ✓distributor: lcsc C461010, digikey DMN3026LVT-7DITR-ND, mouser 621-DMN3026LVT7
  • ✓family: TSOT-23-6
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-xf_w4h13/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.5)
  • ✓pads: 6 pins = 6 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 6 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ dmn3026lvt-7.kicad_sym✓ dmn3026lvt-7.kicad_mod✓ dmn3026lvt-7.step
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Ray Publish 0.1.0 c64a1f8

DMN3026LVT-7

Diodes Incorporated · MOSFETs · TSOT-23-6

DMN3026LVT-7 from Diodes Incorporated, in a TSOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal of the 30 V N-channel MOSFET, rated for 6.6 A continuous drain current at TA = +25°C (steady state).
2 D passive Drain terminal of the 30 V N-channel MOSFET, rated for 6.6 A continuous drain current at TA = +25°C (steady state).
3 G input Gate terminal, with a gate-source voltage rating of ±20 V (VGSS).
4 S passive Source terminal; the body diode forward current is rated at 3.0 A maximum (IS).
5 D passive Drain terminal of the 30 V N-channel MOSFET, rated for 6.6 A continuous drain current at TA = +25°C (steady state).
6 D passive Drain terminal of the 30 V N-channel MOSFET, rated for 6.6 A continuous drain current at TA = +25°C (steady state).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TSOT-23-6
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250µA 2
Gate Threshold Voltage VGS(th) 1 1.5 2 V VDS = VGS, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30V, VGS = 0V 2
Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V 2
Static Drain-Source On-Resistance RDS(ON) 19 23 mΩ VGS = 10V, ID = 6.5A 2
Static Drain-Source On-Resistance RDS(ON) 22 30 mΩ VGS = 4.5V, ID = 6.0A 2
Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 1.0A 2
Drain-Source Voltage VDSS 30 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current, steady state ID 6.6 A VGS = 10V, TA = +25°C (Note 6) 2
Continuous Drain Current, steady state ID 5.3 A VGS = 10V, TA = +70°C (Note 6) 2
Continuous Drain Current, t<10s ID 8.5 A VGS = 10V, t<10s, TA = +25°C (Note 6) 2
Continuous Drain Current, t<10s ID 6.8 A VGS = 10V, t<10s, TA = +70°C (Note 6) 2
Maximum Body Diode Forward Current IS 3 A Note 6 2
Pulsed Drain Current IDM 35 A 10s pulse, duty cycle = 1% 2
Total Power Dissipation PD 1.2 W TA = +25°C (Note 5) 2
Total Power Dissipation PD 0.8 W TA = +70°C (Note 5) 2
Thermal Resistance, Junction to Ambient, steady state RθJA 100 °C/W Steady state (Note 5) 2
Thermal Resistance, Junction to Ambient, t<10s RθJA 60 °C/W t<10s (Note 5) 2
Total Power Dissipation PD 1.5 W TA = +25°C (Note 6) 2
Total Power Dissipation PD 1 W TA = +70°C (Note 6) 2
Thermal Resistance, Junction to Ambient, steady state RθJA 83 °C/W Steady state (Note 6) 2
Thermal Resistance, Junction to Ambient, t<10s RθJA 50 °C/W t<10s (Note 6) 2
Thermal Resistance, Junction to Case RθJC 14.5 °C/W Note 6 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC Body Diode Reverse Recovery Charge Qrr  1.7  nC IF = 6.5A, dI/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 2
contacts Copper tin  Terminal Connections: See Diagram  Terminals: Finish, Tin Finish annealed over Copper leadframe. 1

CAD (KiCad official)

  • Symbol: DMN3026LVT-7
  • Footprint: Package_TO_SOT_SMD:TSOT-23-6
  • 3D model: TSOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: dmn3026lvt-7-etched.step / dmn3026lvt-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn3026lvt-7.step / dmn3026lvt-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 6e85da7ea9ce98fa, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF