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DMN3020UTS-13

DIODES INCORPORATED · Global Sourcing Parts · TSSOP-8

DMN3020UTS-13 from DIODES INCORPORATED, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied internally to pins 2 and 3.
2 S passive Source of the N-channel MOSFET, tied internally to pins 1 and 3.
3 S passive Source of the N-channel MOSFET, tied internally to pins 1 and 2.
4 G input ESD-protected gate with an internal gate protection diode; VGSS is ±12 V max and VGS(TH) is 0.4 to 1.0 V.
5 D passive Drain of the N-channel MOSFET (VDSS 30 V), tied internally to pins 6, 7 and 8.
6 D passive Drain of the N-channel MOSFET (VDSS 30 V), tied internally to pins 5, 7 and 8.
7 D passive Drain of the N-channel MOSFET (VDSS 30 V), tied internally to pins 5, 6 and 8.
8 D passive Drain of the N-channel MOSFET (VDSS 30 V), tied internally to pins 5, 6 and 7.

Key specifications

Parameter Value
Manufacturer DIODES INCORPORATED
Package TSSOP-8
Category Global Sourcing Parts
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 30 V 2
Gate-Source Voltage VGSS -12 12 V 2
Continuous Drain Current (steady state) ID 6.8 A VGS = 4.5V, steady state, TA = +25°C (Note 7) 2
Continuous Drain Current (steady state) ID 5.4 A VGS = 4.5V, steady state, TA = +70°C (Note 7) 2
Continuous Drain Current (steady state) ID 15 A VGS = 4.5V, steady state, TC = +25°C (Note 7) 2
Continuous Drain Current (steady state) ID 12 A VGS = 4.5V, steady state, TC = +70°C (Note 7) 2
Total Power Dissipation PD 0.85 W TA = +25°C (Note 5) 2
Total Power Dissipation PD 1.4 W TA = +25°C (Note 6) 2
Thermal Resistance, Junction to Ambient RJA 150 °C/W Steady state (Note 5) 2
Thermal Resistance, Junction to Ambient RJA 90 °C/W Steady state (Note 6) 2
Thermal Resistance, Junction to Case RJC 17 (Note 6) 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250μA 2
Zero Gate Voltage Drain Current IDSS 1 µA TJ = +25°C, VDS = 30V, VGS = 0V 2
Gate-Source Leakage IGSS -10 10 µA VGS = ±10V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 0.4 1 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(ON) 15 20 mΩ VGS = 4.5V, ID = 4.5A 2
Static Drain-Source On-Resistance RDS(ON) 18 25 mΩ VGS = 2.5V, ID = 3.5A 2
Static Drain-Source On-Resistance RDS(ON) 25 50 mΩ VGS = 1.8V, ID = 2.0A 2
Diode Forward Voltage VSD 0.8 1.2 V VGS = 0V, IS = 1.0A 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminals: Finish  Matte Tin Annealed over Copper Lead 1

CAD (KiCad official)

  • Symbol: DMN3020UTS-13
  • Footprint: Package_SO:TSSOP-8_4.4x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: dmn3020uts-13-etched.step / dmn3020uts-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn3020uts-13.step / dmn3020uts-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DIODES INCORPORATED datasheet (7 pp, sha256 9ec6c782bf19b998, retrieved 2026-11-06, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF